STP32N06

更新时间： 2024-11-25 22:42:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	203K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STP32N06 数据手册

STP32N06L

STP32N06LFI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STP32N06L

STP32N06LFI

60 V

< 0.055 Ω

32 A

19 A

■

TYPICAL R_DS(on)= 0.045 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

LOGIC LEVEL COMPATIBLE INPUT

175^oC OPERATING TEMPERATURE

APPLICATION ORIENTED

TO-220

ISOWATT220

CHARACTERIZATION

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP32N06L

STP32N06LFI

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

± 15

I_D

I_DM(•)

P_tot

128

105

0.7

128

Total Dissipation at T_c= 25 ^oC

W/^oC

^oC

Derating Factor

0.27

2000

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

November 1996

12 3 4 5 6 7...10

中文翻译

下载PDF

与STP32N06相关器件

型号	品牌	获取价格	描述	数据表
STP32N06L	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP32N06LFI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP32N55M5	STMICROELECTRONICS	获取价格	29A, 550V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
STP32N65M5	STMICROELECTRONICS	获取价格	N-channel 650 V, 0.095 Î©, 24 A, MDmeshâ¢ V
STP32NM50N	STMICROELECTRONICS	获取价格	N-channel 500 V, 0.1 Î© typ., 22 A MDmeshâ¢
STP33N10	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP33N10FI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP33N60DM2	STMICROELECTRONICS	获取价格	N沟道600 V、0.110 Ohm典型值、24 A MDmesh DM2功率MOSFET
STP33N60DM6	STMICROELECTRONICS	获取价格	N沟道600 V、115 mOhm典型值、25 A MDmesh DM6功率MOSFET，
STP33N60M2	STMICROELECTRONICS	获取价格	N沟道600 V、0.108 Ohm典型值、26 A MDmesh M2功率MOSFET，