Datasheet > STP35N60M2-EP

STP35N60M2-EP

更新时间： 2024-11-27 14:57:31

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	731K
描述
N沟道600 V、0.110 Ohm典型值、26 A MDmesh M2功率MOSFET，TO-220封装

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中文翻译

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技术参数
数据手册

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STP35N60M2-EP 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	Factory Lead Time：	16 weeks
风险等级：	5.75	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STP35N60M2-EP 数据手册

STP35N60M2-EP

N-channel 600 V, 0.110 Ω typ., 26 A MDmesh™ M2 EP

Power MOSFET in a TO-220 package

Datasheet - production data

Features

V_DS

T_Jmax

R_DS(on)

max.

Order code

I_D

TAB

STP35N60M2-EP

650 V

0.130 Ω

26 A



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

Very low turn-off switching losses

100% avalanche tested

TO-220

Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

Tailored for very high-frequency converters

(f > 150 kHz)

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP35N60M2-EP

35N60M2EP

TO-220

Tube

May 2017

DocID030578 Rev 1

1/14

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...14

中文翻译

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