Datasheet > STP36N60M6

STP36N60M6

更新时间： 2024-11-24 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	799K
描述
N沟道600 V、85 mOhm典型值、30 A MDmesh M6功率MOSFET，TO-220封装

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STP36N60M6 数据手册

STP36N60M6, STW36N60M6

N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6

Power MOSFETs in TO-220 and TO-247 packages

Datasheet - production data

Features

TAB

Order code

STP36N60M6

STW36N60M6

V_DS

R_DS(on)max.

I_D

600 V

99 mΩ

30 A



Reduced switching losses

Lower R_DS(on)x area vs previous generation

Low gate input resistance

100% avalanche tested

TO-247

TO-220

Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

Description

The new MDmesh™ M6 technology incorporates

the most recent advancements to the well-known

and consolidated MDmesh family of SJ

MOSFETs. STMicroelectronics builds on the

previous generation of MDmesh devices through

its new M6 technology, which combines excellent

R_DS(on)* area improvement with one of the most

effective switching behaviors available, as well as

a user-friendly experience for maximum end-

application efficiency.

Table 1: Device summary

Order code

STP36N60M6

STW36N60M6

Marking

Package

Packaging

TO-220

TO-247

36N60M6

Tube

March 2017

DocID028429 Rev 3

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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