Datasheet > STP3LN80K5

STP3LN80K5

更新时间： 2024-11-27 14:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	800K
描述
N沟道800 V、2.75 Ohm典型值、2 A MDmesh K5功率MOSFET，TO-220封装

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STP3LN80K5 数据手册

STP3LN80K5, STU3LN80K5

N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5

Power MOSFET in TO-220 and IPAK packages

Datasheet - production data

Features

TAB

Order code

STP3LN80K5

STU3LN80K5

R_DS(on)max

I_D

800 V

3.25 Ω

2 A

TAB

TO-220



Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

IPAK

Applications

Figure 1: Internal schematic diagram



Switching applications

D(2, TAB)

Description

These very high voltage N-channel Power

MOSFET are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

G(1)

S(3)

AM01476v1

Table 1: Device summary

Marking

Order code

STP3LN80K5

STU3LN80K5

Package

TO-220

IPAK

Packing

3LN80K5

Tube

June 2016

DocID027716 Rev 2

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

中文翻译

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