是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | ISOWATT220, 3 PIN | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.7 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 45 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 900 V | 最大漏极电流 (Abs) (ID): | 1.9 A |
最大漏极电流 (ID): | 1.9 A | 最大漏源导通电阻: | 5.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 12 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STP3NB100 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET | |
STP3NB100FP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET | |
STP3NB60 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET | |
STP3NB60FP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET | |
STP3NB80 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET | |
STP3NB80 | SUNTAC |
获取价格 |
POWER MOSFET | |
STP3NB80FP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET | |
STP3NB90 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET | |
STP3NB90FP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET | |
STP3NC50 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh |