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STP3NA90FI PDF预览

STP3NA90FI

更新时间: 2024-11-01 22:29:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
6页 62K
描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STP3NA90FI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:ISOWATT220, 3 PIN针数:3
Reach Compliance Code:not_compliant风险等级:5.7
其他特性:AVALANCHE RATED雪崩能效等级(Eas):45 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):1.9 A
最大漏极电流 (ID):1.9 A最大漏源导通电阻:5.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP3NA90FI 数据手册

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STP3NA90  
STP3NA90FI  
N - CHANNEL ENHANCEMENT MODE  
FAST POWER MOS TRANSISTOR  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
< 5.3 Ω  
5.3 Ω  
ID  
STP3NA90  
STP3NA90FI  
900 V  
900 V  
3 A  
1.9 A  
<
TYPICAL RDS(on) = 4.4 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
2
1
1
REDUCED THRESHOLD VOLTAGE SPREAD  
TO-220  
ISOWATT220  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP3NA90  
STP3NA90FI  
VDS  
VDGR  
VGS  
ID  
Drain-Source Voltage (Vgs = 0)  
Drain-Gate Voltage (Rgs = 20 K)  
Gate-Source Voltage  
Drain-Current (continuous) at Tc = 25oC  
Drain-Current (continuous) at Tc = 100oC  
Drain-Current (Pulsed)  
900  
900  
± 30  
V
V
V
3
2
1.9  
1.2  
A
ID  
A
IDM()  
Ptot  
12  
100  
1.25  
-
12  
A
Total Dissipation at Tc = 25oC  
40  
W
W/oC  
Derating Factor  
0.32  
2000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
V
-65 to 150  
150  
oC  
oC  
Max Operating Junction Temperature  
()Pulse width limited by safe operating area  
1/6  
March 1996  

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