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STP3NC90ZFP PDF预览

STP3NC90ZFP

更新时间: 2024-11-25 22:07:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
11页 337K
描述
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET

STP3NC90ZFP 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
风险等级:5.88雪崩能效等级(Eas):220 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):3.5 A
最大漏极电流 (ID):3.5 A最大漏源导通电阻:3.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):35 W
最大脉冲漏极电流 (IDM):14 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP3NC90ZFP 数据手册

 浏览型号STP3NC90ZFP的Datasheet PDF文件第2页浏览型号STP3NC90ZFP的Datasheet PDF文件第3页浏览型号STP3NC90ZFP的Datasheet PDF文件第4页浏览型号STP3NC90ZFP的Datasheet PDF文件第5页浏览型号STP3NC90ZFP的Datasheet PDF文件第6页浏览型号STP3NC90ZFP的Datasheet PDF文件第7页 
STP3NC90Z - STP3NC90ZFP  
STB3NC90Z-1  
N-CHANNEL 900V - 3.2- 3.5A TO-220/TO-220FP/I2PAK  
Zener-Protected PowerMESH™III MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STP3NC90Z/FP  
STB3NC90Z-1  
900V  
900V  
< 3.5Ω  
< 3.5Ω  
3.5 A  
3.5 A  
TYPICAL R (on) = 3.2Ω  
DS  
EXTREMELY HIGH dv/dt AND CAPABILITY GATE  
TO - SOURCE ZENER DIODES  
3
2
1
TO-220  
TO-220FP  
100% AVALANCHE TESTED  
VERY LOW GATE INPUT RESISTANCE  
GATE CHARGE MINIMIZED  
3
2
1
I2PAK  
(Tabless TO-220)  
DESCRIPTION  
The third generation of MESH OVERLAY™ Power  
MOSFETs for very high voltage exhibits unsurpassed  
on-resistance per unit area while integrating back-to-  
back Zener diodes between gate and source. Such ar-  
rangement gives extra ESD capability with higher rug-  
gedness performance as requested by a large variety  
of single-switch applications.  
APPLICATIONS  
SINGLE-ENDED SMPS IN MONITORS,  
COMPUTER AND INDUSTRIAL APPLICATION  
WELDING EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP(B)3NC90Z(-1) STP3NC90ZFP  
V
Drain-source Voltage (V = 0)  
900  
900  
± 25  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
Drain Current (continuos) at T = 25°C  
3.5  
2.2  
14  
3.5(*)  
2.2(*)  
14  
A
D
C
I
Drain Current (continuos) at T = 100°C  
A
D
C
I
( )  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
100  
0.8  
35  
W
TOT  
C
Derating Factor  
0.28  
W/°C  
mA  
KV  
V/ns  
V
I
Gate-source Current (*)  
±50  
2.5  
3
GS  
V
Gate source ESD(HBM-C=100pF, R=15KΩ)  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (DC)  
Storage Temperature  
ESD(G-S)  
dv/dt  
V
--  
2000  
ISO  
T
–65 to 150  
150  
°C  
°C  
stg  
T
Max. Operating Junction Temperature  
j
(1)I 3.5A, di/dt 100A/µs, V  
V , T T  
(BR)DSS j JMAX  
(•)Pulse width limited by safe operating area  
SD  
DD  
(*) Limited only by maximum temperature allowed  
.
January 2001  
1/11  

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