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STP40NE03L-20 PDF预览

STP40NE03L-20

更新时间: 2024-11-25 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 104K
描述
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET

STP40NE03L-20 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.71
雪崩能效等级(Eas):200 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):40 A
最大漏极电流 (ID):40 A最大漏源导通电阻:0.023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):80 W
最大脉冲漏极电流 (IDM):160 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP40NE03L-20 数据手册

 浏览型号STP40NE03L-20的Datasheet PDF文件第2页浏览型号STP40NE03L-20的Datasheet PDF文件第3页浏览型号STP40NE03L-20的Datasheet PDF文件第4页浏览型号STP40NE03L-20的Datasheet PDF文件第5页浏览型号STP40NE03L-20的Datasheet PDF文件第6页浏览型号STP40NE03L-20的Datasheet PDF文件第7页 
STP40NE03L-20  
N - CHANNEL ENHANCEMENT MODE  
” SINGLE FEATURE SIZE ” POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP40NE03L-20  
30 V  
<0.020 Ω  
40 A  
TYPICAL RDS(on) = 0.014 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
LOW GATE CHARGE A 100 oC  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
2
DESCRIPTION  
This Power MOSFET is the latest development of  
SGS-THOMSON unique ”Single Feature Size  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturingreproducibility.  
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS IN HIGH  
PERFORMANCE VRMs  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
30  
30  
V
V
VDGR  
VGS  
ID  
± 15  
40  
V
A
ID  
28  
A
I
DM()  
160  
80  
A
Ptot  
Total Dissipation at Tc = 25 oC  
W
Derating Factor  
0.53  
7
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tst g  
Storage Temperature  
-65 to 175  
Tj  
Max. Operating Junction Temperature  
175  
() Pulse width limited by safe operating area  
(1) ISD 40 A,di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/8  
October 1997  

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