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STP3NB60 PDF预览

STP3NB60

更新时间: 2024-11-22 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 117K
描述
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP3NB60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.6其他特性:AVALANCHE RATED
雪崩能效等级(Eas):100 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):3.3 A
最大漏极电流 (ID):3.3 A最大漏源导通电阻:3.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):9 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:80 W最大功率耗散 (Abs):80 W
最大脉冲漏极电流 (IDM):13.2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大开启时间(吨):28 nsBase Number Matches:1

STP3NB60 数据手册

 浏览型号STP3NB60的Datasheet PDF文件第2页浏览型号STP3NB60的Datasheet PDF文件第3页浏览型号STP3NB60的Datasheet PDF文件第4页浏览型号STP3NB60的Datasheet PDF文件第5页浏览型号STP3NB60的Datasheet PDF文件第6页浏览型号STP3NB60的Datasheet PDF文件第7页 
STP3NB60  
STP3NB60FP  
N - CHANNEL ENHANCEMENT MODE  
PowerMESH  
MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP3NB60  
STP3NB60FP  
600 V  
600 V  
<3.6 Ω  
< 3.6 Ω  
3.3 A  
2.2 A  
TYPICAL RDS(on) = 3.3 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
1
2
1
DESCRIPTION  
Using the latest high voltage MESH OVERLAY  
process, SGS-Thomson has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP3NB60FP  
Unit  
STP3NB60  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
600  
600  
± 30  
V
V
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
3.3  
2.1  
2.2  
1.4  
A
ID  
A
I
DM()  
13.2  
80  
13.2  
35  
A
Ptot  
Total Dissipation at Tc = 25 oC  
W
Derating Factor  
0.64  
4.5  
0.28  
4.5  
W/oC  
V/ns  
V
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
2000  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/9  
March 1998  

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