Datasheet > STP3NB80

STP3NB80

更新时间： 2024-11-23 06:14:51

品牌	Logo	应用领域
SUNTAC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
4页	150K
描述
POWER MOSFET

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STP3NB80 数据手册

STP3NB80

POWER MOSFET

GENERAL DESCRIPTION

FEATURES

This advanced high voltage MOSFET is designed to

withstand high energy in the avalanche mode and switch

efficiently. This new high energy device also offers a

'ꢀ Higher Current Rating

'ꢀ Lower Rds(on)

'ꢀ Lower Capacitances

drain-to-source diode with fast recovery time. Designed for 'ꢀ Lower Total Gate Charge

high voltage, high speed switching applications such as

power supplies, converters, power motor controls and

bridge circuits.

'ꢀ Tighter VSD Specifications

'ꢀ Avalanche Energy Specified

PIN CONFIGURATION

SYMBOL

TO- TO-220FP

Top View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current ꢀ Continuous

ꢀ Pulsed

Symbol

I_D

Value

3.0

Unit

I_DM

Gate-to-Source Voltage ꢀ Continue

ꢀ Non-repetitive

V_GS

V_GSM

Total Power Dissipation

P_D

Derate above 25R

0.28

W/R

Operating and Storage Temperature Range

T_J, T_STG

E_AS

-65 to 150

176

......R

Single Pulse Drain-to-Source Avalanche Energy ꢀ T_J= 25R

(V_DD= 50V, V_GS= 10V, ID = 3A, L = 10mH, R_G= 25ꢀ)

Thermal Resistance ꢀ Junction to Case

1.70

R/W

ꢀ Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

T_L

.300

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