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STP3NB90

更新时间: 2024-11-22 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 89K
描述
N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET

STP3NB90 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.63
Is Samacsys:N雪崩能效等级(Eas):230 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):3.5 A最大漏极电流 (ID):3.5 A
最大漏源导通电阻:4.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):14 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP3NB90 数据手册

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STP3NB90  
STP3NB90FP  
®
N - CHANNEL 900V - 4 - 3.5 A - TO-220/TO-220FP  
PowerMESH MOSFET  
TARGET DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP3NB90  
STP3NB90FP  
900 V  
900 V  
< 4.2 Ω  
< 4.2 Ω  
3.5 A  
3.5 A  
TYPICAL RDS(on) = 4 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
2
DESCRIPTION  
1
1
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP4NB90FP  
Unit  
STP4NB90  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
900  
900  
± 30  
V
V
V
o
(**)  
Drain Current (continuous) at Tc = 25 C  
3.5  
2.2  
14  
3.5  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
1.26(*)  
14  
A
IDM  
Ptot  
Drain Current (pulsed)  
Total Dissipation at Tc = 25 oC  
Derating Factor  
A
100  
0.8  
4.5  
35  
W
0.28  
4.5  
W/oC  
V/ns  
V
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
2000  
-65 to 150  
150  
Max. Operating Junction Temperature  
*
( ) Pulse width limited by safe operating area  
(1) ISD 3.5 A, di/dt 200 A/ s, VDD V(BR)DSS, Tj TJMAX (**) Limited only TJMAX  
≤ ≤ µ ≤ ≤  
1/6  
October 1998  

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