STP3NC90Z

更新时间： 2024-11-01 22:14:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	337K
描述
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET

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STP3NC90Z 数据手册

STP3NC90Z - STP3NC90ZFP

STB3NC90Z-1

N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK

Zener-Protected PowerMESH™III MOSFET

TYPE

DSS

DS(on)

STP3NC90Z/FP

STB3NC90Z-1

900V

< 3.5Ω

3.5 A

■

TYPICAL R (on) = 3.2Ω

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

TO-220

TO-220FP

■

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

I2PAK

(Tabless TO-220)

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

■

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP(B)3NC90Z(-1) STP3NC90ZFP

Drain-source Voltage (V = 0)

900

± 25

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

3.5

2.2

3.5(*)

2.2(*)

Drain Current (continuos) at T = 100°C

( )

●

Drain Current (pulsed)

Total Dissipation at T = 25°C

100

0.8

TOT

Derating Factor

0.28

W/°C

V/ns

Gate-source Current (*)

±50

2.5

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

ESD(G-S)

dv/dt

2000

ISO

–65 to 150

150

°C

stg

Max. Operating Junction Temperature

(1)I ≤3.5A, di/dt ≤100A/µs, V

≤ V , T ≤ T

(BR)DSS j JMAX

(•)Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

January 2001

1/11

12 3 4 5 6 7...11

中文翻译

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