Datasheet > STP3NA100FP

STP3NA100FP

更新时间： 2024-02-20 04:43:34

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中文翻译

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数据手册

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STP3NA100FP 数据手册

STP3NA100

STP3NA100FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STP3NA100

STP3NA100FI

1000 V

<5 Ω

< 5 Ω

3.5 A

2 A

■

TYPICAL R_DS(on)= 4.3 Ω

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

REDUCED THRESHOLD VOLTAGE SPREAD

TO-220

TO-220FI

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STP3NA100 STP3NA100FI

Unit

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

1000

± 30

Drain Current (continuous) at T_c= 25 C

3.5

2.0

1.2

I_D

Drain Current (continuous) at T_c= 100 C

I_DM(•)

P_tot

Drain Current (pulsed)

Total Dissipation at T_c= 25 C

110

0.88

W/^oC

^oC

Derating Factor

0.36

2000

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/9

February 1998

12 3 4 5 6 7...9

中文翻译

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