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STP3NA80 PDF预览

STP3NA80

更新时间: 2024-11-01 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 202K
描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STP3NA80 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.26Is Samacsys:N
雪崩能效等级(Eas):48 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (Abs) (ID):3.1 A
最大漏极电流 (ID):3.1 A最大漏源导通电阻:4.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):12.5 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP3NA80 数据手册

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STP3NA80  
STP3NA80FI  
N - CHANNEL ENHANCEMENT MODE  
FAST POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
ID  
STP3NA80  
STP3NA80FI  
800 V  
800 V  
< 4.5 Ω  
< 4.5 Ω  
3.1 A  
2 A  
TYPICAL RDS(on) = 3.5 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INTRINSIC CAPACITANCES  
GATE GHARGE MINIMIZED  
3
3
2
2
1
1
REDUCED THRESHOLD VOLTAGE SPREAD  
TO-220  
ISOWATT220  
DESCRIPTION  
This series of POWER MOSFETS represents the  
most advanced high voltage technology. The  
optimized cell layout coupled with  
a new  
proprietary edge termination concur to give the  
device low RDS(on) and gate charge, unequalled  
ruggedness and superior switching performance.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP3NA80  
STP5NA80FI  
VDS  
VDG R  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain-gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
800  
800  
± 30  
V
V
V
3.1  
2
2
A
ID  
1.3  
A
IDM()  
Ptot  
12.5  
100  
1.25  
12.5  
40  
A
Total Dissipation at Tc = 25 oC  
W
W/oC  
V
oC  
oC  
Derating Factor  
0.32  
2000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
November 1993  

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