Datasheet > STP35N65DM2

STP35N65DM2

更新时间： 2024-11-27 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	514K
描述
N沟道650 V、0.094 Ohm典型值、28 A MDmesh DM2功率MOSFET，TO-220封装

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中文翻译

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技术参数
数据手册

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STP35N65DM2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	17 weeks	风险等级：	5.74
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STP35N65DM2 数据手册

STP35N65DM2

Datasheet

N-channel 650 V, 93 mΩ typ., 32 A MDmesh DM2 Power MOSFET

in a TO-220 package

DS(on)

max.

Order code

TAB

STP35N65DM2

650 V

110 mΩ

32 A

•

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

TO-220

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

D(2, TAB)

Applications

G(1)

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

S(3)

AM01476v1_tab

Product status link

STP35N65DM2

Product summary

Order code

STP35N65DM2

Marking

Package

Packing

35N65DM2

TO-220

Tube

DS12245 - Rev 3 - October 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...11

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