Datasheet > STP33N60M6

STP33N60M6

更新时间： 2023-12-20 18:46:24

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	252K
描述
N沟道600 V、105 mOhm典型值、25 A MDmesh M6功率MOSFET，TO-220封装

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STP33N60M6 数据手册

STP33N60M6

Datasheet

N-channel 600 V, 105 mΩ typ., 25 A, MDmesh™ M6

Power MOSFET in a TO-220 package

Features

max.

Order code

STP33N60M6

DS(on)

TAB

600 V

125 mΩ

25 A

•

Reduced switching losses

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

TO-220

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

LLC converters

Boost PFC converters

S(3)

AM01475V1

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to

the well-known and consolidated MDmesh family of SJ MOSFETs.

STMicroelectronics builds on the previous generation of MDmesh devices through its

new M6 technology, which combines excellent R_DS(on)per area improvement with

one of the most effective switching behaviors available, as well as a user-friendly

experience for maximum end-application efficiency.

Product status link

STP33N60M6

Product summary

Order code

Marking

STP33N60M6

33N60M6

TO-220

Package

Packing

Tube

DS12640 - Rev 2 - July 2018

www.st.com

For further information contact your local STMicroelectronics sales office.

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