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STP34NM60N PDF预览

STP34NM60N

更新时间: 2024-11-23 08:59:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
17页 936K
描述
N-channel 600 V, 0.092 Ω, 29 A MDmesh? II Power MOSFET TO-220, TO-247, TO-220FP

STP34NM60N 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.69Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:222415
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220 (dual gauge)
Samacsys Released Date:2015-07-28 08:27:14Is Samacsys:N
雪崩能效等级(Eas):345 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):29 A
最大漏极电流 (ID):29 A最大漏源导通电阻:0.105 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):210 W
最大脉冲漏极电流 (IDM):116 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP34NM60N 数据手册

 浏览型号STP34NM60N的Datasheet PDF文件第2页浏览型号STP34NM60N的Datasheet PDF文件第3页浏览型号STP34NM60N的Datasheet PDF文件第4页浏览型号STP34NM60N的Datasheet PDF文件第5页浏览型号STP34NM60N的Datasheet PDF文件第6页浏览型号STP34NM60N的Datasheet PDF文件第7页 
STF34NM60N  
STP34NM60N, STW34NM60N  
N-channel 600 V, 0.092 Ω, 29 A MDmesh™ II Power MOSFET  
TO-220, TO-247, TO-220FP  
Features  
RDS(on)  
max.  
Type  
VDSS  
ID  
PTOT  
3
3
2
2
STF34NM60N  
STP34NM60N  
STW34NM60N  
600 V 0.105 Ω 29 A  
600 V 0.105 Ω 29 A 210 W  
600 V 0.105 Ω 29 A 210 W  
40 W  
1
1
TO-247  
TO-220  
100% avalanche tested  
3
Low input capacitance and gate charge  
Low gate input resistance  
2
1
TO-220FP  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
These devices are made using the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
$ꢅꢆꢇ  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
TO-220FP  
Packaging  
STF34NM60N  
STP34NM60N  
STW34NM60N  
34NM60N  
TO-220  
TO-247  
Tube  
March 2011  
Doc ID 17740 Rev 3  
1/17  
www.st.com  
17  

STP34NM60N 替代型号

型号 品牌 替代类型 描述 数据表
IPP60R099CPA INFINEON

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