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STP34NM60ND PDF预览

STP34NM60ND

更新时间: 2024-11-23 12:01:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体二极管晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
22页 1163K
描述
N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247

STP34NM60ND 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.67Is Samacsys:N
其他特性:ULTRA-LOW RESISTANCE雪崩能效等级(Eas):345 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):29 A
最大漏极电流 (ID):29 A最大漏源导通电阻:0.11 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):210 W
最大脉冲漏极电流 (IDM):116 A子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP34NM60ND 数据手册

 浏览型号STP34NM60ND的Datasheet PDF文件第2页浏览型号STP34NM60ND的Datasheet PDF文件第3页浏览型号STP34NM60ND的Datasheet PDF文件第4页浏览型号STP34NM60ND的Datasheet PDF文件第5页浏览型号STP34NM60ND的Datasheet PDF文件第6页浏览型号STP34NM60ND的Datasheet PDF文件第7页 
STB34NM60ND, STF34NM60ND,  
STP34NM60ND, STW34NM60ND  
N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET  
(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247  
Datasheet — production data  
Features  
TAB  
VDSS @TJ  
max.  
RDS(on)  
max.  
Order codes  
ID  
3
1
STB34NM60ND  
STF34NM60ND  
STP34NM60ND  
STW34NM60ND  
3
2
1
2
650 V  
0.110 Ω  
29 A  
D PAK  
TO-220FP  
TAB  
The world’s best RDS(on) in TO-220 amongst  
the fast recovery diode devices  
3
100% avalanche tested  
2
3
1
2
Low input capacitance and gate charge  
Low gate input resistance  
1
TO-220  
TO-247  
Extremely high dv/dt and avalanche  
capabilities  
Figure 1.  
Internal schematic diagram  
Applications  
Switching applications  
$ꢅꢆꢇ 4!"ꢈ  
Description  
These FDmesh™ II Power MOSFETs with  
intrinsic fast-recovery body diode are produced  
using the second generation of MDmesh™  
technology. Utilizing a new strip-layout vertical  
structure, these revolutionary devices feature  
extremely low on-resistance and superior  
switching performance. They are ideal for bridge  
topologies and ZVS phase-shift converters.  
'ꢅꢁꢈ  
3ꢅꢉꢈ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
D2PAK  
Packaging  
STB34NM60ND  
STF34NM60ND  
STP34NM60ND  
STW34NM60ND  
34NM60ND  
34NM60ND  
34NM60ND  
34NM60ND  
Tape and reel  
Tube  
TO-220FP  
TO-220  
Tube  
TO-247  
Tube  
October 2012  
Doc ID 18099 Rev 5  
1/22  
This is information on a product in full production.  
www.st.com  
22  
 

STP34NM60ND 替代型号

型号 品牌 替代类型 描述 数据表
IPP60R099CPA INFINEON

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