Datasheet > STP3481S6RG

STP3481S6RG

更新时间： 2024-01-31 01:56:38

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
6页	384K
描述
P Channel Enhancement Mode MOSFET

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STP3481S6RG 数据手册

STP3481

P Channel Enhancement Mode MOSFET

-5.2A

DESCRIPTION

The STP3481 is the P-Channel logic enhancement mode power field effect transistors

are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone

and notebook computer power management and other battery powered circuits, and

low in-line power loss are needed in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

TSOP-6P

-30V/-5.2A, R_DS(ON)= 55m-ohm

@VGS = -10V

-30V/-4.2A, R_DS(ON)= 75m-ohm

@VGS = -4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

TSOP-6P package design

1.2.5.6.Drain 3.Gate 4.Source

PART MARKING

TSOP-6P

Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

STP3481S6RG

TSOP-6P

81YA

※ Process Code : A ~ Z ; a ~ z

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP3481 2006. V1

12 3 4 5 6

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