Datasheet > STP3467ST6RG

STP3467ST6RG

更新时间： 2024-11-24 01:17:15

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
6页	815K
描述
P Channel Enhancement Mode MOSFET

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STP3467ST6RG 数据手册

STP3467

P Channel Enhancement Mode MOSFET

-5.2A

DESCRIPTION

The STP3467 is the P-Channel enhancement mode power field effect transistor which is

produced using high cell density, DMOS trench technology. This high density process is

especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application, such as cellular phone and notebook computer

power management and other battery powered circuits, and low in-line power loss are

needed in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

TSOP-6P

◆

-20V/-5.0A, RDS(ON)=90mohm@VGS=-4.5V

-20V/-3.5A, RDS(ON)=110mohm@VGS=-2.5V

-20V/-1.7A, RDS(ON)=140mohm@VGS=-1.8V

◆

Super high density cell design for extremely low

67YW

RDS(ON)

Exceptional an-resistance and maximum DC

current capability

TSOP-6P package design

Y: Year

A: Week Code

ORDERING INFORMATION

Part Number

Package

Part Marking

STP3467ST6RG

TSOP-6

67YW

※ Week Code Code : A ~ Z ; a ~ z

※ STP3467ST6RG

ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP3467 2008. V1

12 3 4 5 6

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