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STP30NE06 PDF预览

STP30NE06

更新时间: 2024-11-22 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 50K
描述
N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

STP30NE06 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.13
Is Samacsys:N雪崩能效等级(Eas):100 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):80 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP30NE06 数据手册

 浏览型号STP30NE06的Datasheet PDF文件第2页浏览型号STP30NE06的Datasheet PDF文件第3页浏览型号STP30NE06的Datasheet PDF文件第4页浏览型号STP30NE06的Datasheet PDF文件第5页浏览型号STP30NE06的Datasheet PDF文件第6页 
STP30NE06  
STP30NE06FP  
N - CHANNEL 60V - 0.042  
- 30A - TO-220/TO-220FP  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP30NE06  
STP30NE06FP  
60 V  
60 V  
< 0.050 Ω  
30 A  
17 A  
< 0.050  
TYPICAL RDS(on) = 0.042  
AVALANCHERUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
175oC OPERATING TEMPERATURE  
HIGH dV/dt CAPABILITY  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
3
2
2
1
1
DESCRIPTION  
TO-220  
TO-220FP  
This Power Mosfet is the latest development of  
STMicroelectronics unique ”Single Feature Size”  
process whereby a single body is implanted on a  
strip layout structure. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalance characteristics and  
less critical alignment steps therefore a remarka-  
ble manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP30NE06 STP30NE06FP  
Unit  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k  
Gate-source Voltage  
60  
60  
V
V
)
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
30  
21  
17  
12  
A
ID  
A
IDM()  
Ptot  
120  
80  
68  
A
o
Total Dissipation at Tc = 25 C  
30  
W
Derating Factor  
0.53  
0.2  
2000  
W/oC  
VISO  
dV/dt  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Peak Diode Recovery voltage slope  
Storage Temperature  
V
7
V/ns  
oC  
oC  
-65 to 175  
Max. Operating Junction Temperature  
175  
≤ ≤ µ ≤ ≤  
(1) ISD 30 A, di/dt 300 A/ s, VDD V(BR)DSS, Tj TJMAX  
( ) Pulse width limited by safe operating area  
1/6  
January 1999  

STP30NE06 替代型号

型号 品牌 替代类型 描述 数据表
IRFR024NTRPBF INFINEON

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