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NTD3055L104T4G PDF预览

NTD3055L104T4G

更新时间: 2024-11-17 22:16:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 77K
描述
Power MOSFET

NTD3055L104T4G 数据手册

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NTD3055L104  
Power MOSFET  
12 Amps, 60 Volts, Logic Level  
N−Channel DPAK  
Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls and bridge  
circuits.  
http://onsemi.com  
Features  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
Pb−Free Packages are Available  
Lower R  
60 V  
104 mW  
12 A  
DS(on)  
Lower V  
Tighter V Specification  
Lower Diode Reverse Recovery Time  
Lower Reverse Recovery Stored Charge  
DS(on)  
N−Channel  
SD  
D
Typical Applications  
Power Supplies  
Converters  
Power Motor Controls  
Bridge Circuits  
G
S
MARKING  
DIAGRAMS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol Value  
Unit  
Vdc  
Vdc  
Vdc  
4
Drain−to−Source Voltage  
V
60  
60  
Drain  
DSS  
Drain−to−Gate Voltage (R = 10 MW)  
V
DGR  
GS  
4
DPAK  
CASE 369C  
STYLE 2  
Gate−to−Source Voltage, Continuous  
V
V
"15  
"20  
GS  
GS  
− Non−Repetitive (t v10 ms)  
p
2
1
Drain Current  
3
− Continuous @ T = 25°C  
I
12  
10  
45  
Adc  
Apk  
A
D
2
− Continuous @ T = 100°C  
I
D
1
3
A
Drain  
− Single Pulse (t v10 ms)  
I
DM  
Gate  
p
Source  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
48  
0.32  
2.1  
W
W/°C  
W
A
D
4
Drain  
Total Power Dissipation @ T = 25°C (Note 1)  
A
4
Total Power Dissipation @ T = 25°C (Note 2)  
1.5  
W
A
DPAK−3  
CASE 369D  
STYLE 2  
Operating and Storage Temperature Range  
Single Pulse Drain−to−Source Avalanche  
T , T  
J
55 to  
+175  
°C  
stg  
E
AS  
61  
mJ  
1
Energy − Starting T = 25°C  
J
2
3
(V = 25 Vdc, V = 5.0 Vdc, L = 1.0 mH  
DD  
GS  
I
= 11 A, V = 60 Vdc)  
DS  
L(pk)  
1
2
3
Thermal Resistance, − Junction−to−Case  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
R
R
R
3.13  
71.4  
100  
°C/W  
°C  
Gate Drain Source  
q
JC  
JA  
JA  
q
q
55L104  
A
Y
= Device Code  
= Assembly Location  
= Year  
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10 seconds  
T
260  
L
W
= Work Week  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. When surface mounted to an FR4 board using 1pad size,  
2
(Cu Area 1.127 in ).  
2. When surface mounted to an FR4 board using the minimum recommended  
2
pad size, (Cu Area 0.412 in ).  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 4  
NTD3055L104/D  
 

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