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NTD3055L170 PDF预览

NTD3055L170

更新时间： 2024-11-18 03:45:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 83K
描述
9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK

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中文翻译

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NTD3055L170 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：not_compliantHTS代码：8541.29.00.95
风险等级：5.16Is Samacsys：N
Base Number Matches：1

NTD3055L170 数据手册

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NTD3055L170  
Power MOSFET  
9.0 Amps, 60 Volts, Logic Level,  
N−Channel DPAK  
Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls and bridge  
circuits.  
http://onsemi.com  
9.0 AMPERES, 60 VOLTS  
Features  
RDS(on) = 170 mW  
• Pb−Free Packages are Available  
N−Channel  
Typical Applications  
D
• Power Supplies  
• Converters  
• Power Motor Controls  
• Bridge Circuits  
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
Rating  
Symbol  
Value  
Unit  
DIAGRAMS  
Drain−to−Source Voltage  
V
60  
60  
Vdc  
Vdc  
Vdc  
DSS  
4
Drain−to−Gate Voltage (R = 10 MW)  
V
DGR  
GS  
Drain  
Gate−to−Source Voltage  
− Continuous  
V
V
"15  
"20  
4
GS  
GS  
DPAK  
− Non−repetitive (t v10 ms)  
p
CASE 369AA  
(Surface Mounted)  
STYLE 2  
Drain Current  
− Continuous @ T = 25°C  
Adc  
Apk  
2
1
I
D
9.0  
3.0  
27  
A
3
− Continuous @ T = 100°C  
I
D
A
2
− Single Pulse (t v10 ms)  
I
DM  
p
1
Gate  
3
Drain  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
Total Power Dissipation @ T = 25°C (Note 1)  
P
28.5  
0.19  
2.1  
W
W/°C  
W
Source  
A
D
4
A
Drain  
Total Power Dissipation @ T = 25°C (Note 2)  
1.5  
W
A
Operating and Storage Temperature Range  
T , T  
−55 to  
175  
°C  
4
J
stg  
DPAK−3  
CASE 369D  
(Straight Lead)  
STYLE 2  
Single Pulse Drain−to−Source Avalanche  
E
AS  
30  
mJ  
Energy − Starting T = 25°C  
J
(V = 25 Vdc, V = 5.0 Vdc,  
DD  
GS  
1
L = 1.0 mH, I (pk) = 7.75 A, V = 60 Vdc)  
L
DS  
2
3
Thermal Resistance  
− Junction−to−Case  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
°C/W  
1
2
3
R
R
R
5.2  
71.4  
100  
q
JC  
JA  
JA  
Gate Drain Source  
q
q
3170L  
A
Y
= Device Code  
= Assembly Location  
= Year  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
W
= Work Week  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
1. When surface mounted to an FR4 board using 0.5 sq in pad size.  
2. When surface mounted to an FR4 board using minimum recommended  
pad size.  
dimensions section on page 2 of this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 3  
NTD3055L170/D  
 
12345678

中文翻译

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NTD3055L170 替代型号

型号 品牌 替代类型 描述 数据表
NTD3055L170G ONSEMI

完全替代

 9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4G ONSEMI

类似代替

 9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4 ONSEMI

类似代替

 9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK

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NTD30N02 ROCHESTER

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 		30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
NTD30N02G ROCHESTER

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 		30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3

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