生命周期: | Contact Manufacturer | 包装说明: | O-PALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.76 |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 54 V | JESD-30 代码: | O-PALF-W2 |
最大非重复峰值正向电流: | 20 A | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 最大输出电流: | 0.3 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 35000 V | 子类别: | Rectifier Diodes |
表面贴装: | NO | 技术: | AVALANCHE |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTD360N65S3H | ONSEMI |
获取价格 |
Power MOSFET, N-Channel, SUPERFET® III, FAST, | |
NTD360N80S3Z | ONSEMI |
获取价格 |
MOSFET – Power, N-Channel, SUPERFET® III, 800 | |
NTD3808N | ONSEMI |
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Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK | |
NTD3808N-1G | ONSEMI |
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Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK | |
NTD3808N-35G | ONSEMI |
获取价格 |
Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK | |
NTD3808NT4G | ONSEMI |
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Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK | |
NTD3813N | ONSEMI |
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Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK | |
NTD3813N-1G | ONSEMI |
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Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK | |
NTD3813N-35G | ONSEMI |
获取价格 |
Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK | |
NTD3813NT4G | ONSEMI |
获取价格 |
Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK |