NTD3055L170-1

更新时间： 2024-02-07 23:38:26

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	83K
描述
9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK

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NTD3055L170-1 数据手册

NTD3055L170

Power MOSFET

9.0 Amps, 60 Volts, Logic Level,

N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

9.0 AMPERES, 60 VOLTS

Features

R_DS(on)= 170 mW

• Pb−Free Packages are Available

N−Channel

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

Rating

Symbol

Value

Unit

DIAGRAMS

Drain−to−Source Voltage

Vdc

DSS

Drain−to−Gate Voltage (R = 10 MW)

DGR

Drain

Gate−to−Source Voltage

− Continuous

"15

"20

DPAK

− Non−repetitive (t v10 ms)

CASE 369AA

(Surface Mounted)

STYLE 2

Drain Current

− Continuous @ T = 25°C

Adc

Apk

9.0

3.0

− Continuous @ T = 100°C

− Single Pulse (t v10 ms)

Gate

Drain

Total Power Dissipation @ T = 25°C

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 1)

28.5

0.19

2.1

W/°C

Source

Drain

Total Power Dissipation @ T = 25°C (Note 2)

1.5

Operating and Storage Temperature Range

T , T

−55 to

175

°C

stg

DPAK−3

CASE 369D

(Straight Lead)

STYLE 2

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

(V = 25 Vdc, V = 5.0 Vdc,

L = 1.0 mH, I (pk) = 7.75 A, V = 60 Vdc)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

°C/W

5.2

71.4

100

Gate Drain Source

3170L

= Device Code

= Assembly Location

= Year

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

= Work Week

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using minimum recommended

pad size.

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 3

NTD3055L170/D

12 3 4 5 6 7 8

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与NTD3055L170-1相关器件

型号	品牌	获取价格	描述	数据表
NTD3055L170-1G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD30N02	ONSEMI	获取价格	Power MOSFET 30 Amps, 24 Volts
NTD30N02	ROCHESTER	获取价格	30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
NTD30N02G	ROCHESTER	获取价格	30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3
NTD30N02G	ONSEMI	获取价格	N Channel DPAK MOSFET 30 Amps, 24 Volts
NTD30N02T4	ONSEMI	获取价格	Power MOSFET 30 Amps, 24 Volts
NTD30N02T4	ROCHESTER	获取价格	30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3

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