NTD32N06L

更新时间： 2024-01-23 23:31:25

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	70K
描述
Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK)

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数据手册
替代型号

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NTD32N06L 数据手册

NTD32N06L

Power MOSFET

32 Amps, 60 Volts, Logic Level

N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

Features

TYP

I MAX

DSS

DS(ON)

• Smaller Package than MTB30N06VL

• Lower R

60 V

23.7 mW

32 A

, V

, and Total Gate Charge

DS(on)

• Lower and Tighter V

• Lower Diode Reverse Recovery Time

• Lower Reverse Recovery Stored Charge

N−Channel

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MARKING DIAGRAMS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain

Drain−to−Source Voltage

Vdc

DSS

Drain−to−Gate Voltage (R = 10 MW)

DPAK

DGR

CASE 369C

(Surface Mount)

Style 2

Gate−to−Source Voltage

− Continuous

"20

"30

− Non−Repetitive (t v10 ms)

Drain Current

− Continuous @ T = 25°C

Gate

Drain

Adc

Source

− Continuous @ T = 100°C

Apk

− Single Pulse (t v10 ms)

Drain

Total Power Dissipation @ T = 25°C

93.75

0.625 W/°C

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 1)

Total Power Dissipation @ T = 25°C (Note 2)

2.88

1.5

DPAK

CASE 369D

(Straight Lead)

Style 2

Operating and Storage Temperature Range

T , T

−55 to

+175

°C

stg

Single Pulse Drain−to−Source Avalanche

313

Energy − Starting T = 25°C (Note 3)

32N06L

Device Code

= Year

= Work Week

(V = 50 Vdc, V = 5 Vdc, L = 1.0 mH,

Gate Drain Source

= 25 A, V = 60 Vdc, R = 25 W)

DS G

L(pk)

Thermal Resistance

− Junction−to−Case

°C/W

°C

1.6

100

ORDERING INFORMATION

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

†

Device

Package

Shipping

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

NTD32N06L

DPAK

75 Units/Rail

DPAK

Straight Lead

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

NTD32N06L−1

75 Units/Rail

NTD32N06LT4

DPAK

2500/Tape & Reel

1. When surface mounted to FR4 board using 0.5″ pad size.

2. When surface mounted to FR4 board using minimum recommended pad

size.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

3. Repetitive rating; pulse width limited by maximum junction temperature.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

April, 2004 − Rev. 3

NTD32N06L/D

12 3 4 5 6 7 8

中文翻译

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NTD32N06L 替代型号

型号	品牌	替代类型	描述	数据表
NTD32N06LT4G	ONSEMI	类似代替	Power MOSFET 32 Amps, 60 Volts
NTD32N06LG	ONSEMI	类似代替	Power MOSFET 32 Amps, 60 Volts
NTD32N06LT4	ONSEMI	功能相似	Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK)

与NTD32N06L相关器件

型号	品牌	获取价格	描述	数据表
NTD32N06L/D	ETC	获取价格	Power MOSFET 32 Amps， 60 Volts， Logic Level
NTD32N06L-001	ONSEMI	获取价格	Power MOSFET 32 Amps, 60 Volts
NTD32N06L-1	ONSEMI	获取价格	Power MOSFET 32 Amps, 60 Volts, Logic Level(N-Channel DPAK)
NTD32N06L-1G	ONSEMI	获取价格	Power MOSFET 32 Amps, 60 Volts
NTD32N06LG	ONSEMI	获取价格	Power MOSFET 32 Amps, 60 Volts
NTD32N06LT4	ONSEMI	获取价格	Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK)
NTD32N06LT4G	ONSEMI	获取价格	Power MOSFET 32 Amps, 60 Volts
NTD32N06T4	ONSEMI	获取价格	32 Amps, 60 Volts, N−Channel DPAK
NTD32N06T4G	ONSEMI	获取价格	32 Amps, 60 Volts, N−Channel DPAK
NTD35	EDI	获取价格	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

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