Datasheet > NTD3817N

NTD3817N

更新时间： 2024-11-18 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	95K
描述
Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK

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NTD3817N 数据手册

NTD3817N

Power MOSFET

16 V, 34.5 A, Single N-Channel, DPAK/IPAK

Features

•ꢀLow R

to Minimize Conduction Losses

DS(on)

•ꢀLow Capacitance to Minimize Driver Losses

•ꢀOptimized Gate Charge to Minimize Switching Losses

•ꢀThree Package Variations for Design Flexibility

•ꢀThese are Pb-Free Devices

http://onsemi.com

MAX

I MAX

(BR)DSS

DS(ON)

13.9 mW @ 10 V

29 mW @ 4.5 V

16 V

34.5 A

Applications

•ꢀDC-DC Converters

•ꢀHigh Side Switching

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain

DSS

T = 25°C

10.8

N-CHANNEL MOSFET

Current R

(Note 1)

T = 85°C

8.4

2.5

Power Dissipation

(Note 1)

T = 25°C

Continuous Drain

Current R

(Note 2)

T = 25°C

7.6

5.9

1.2

T = 85°C

Steady

State

Power Dissipation

(Note 2)

T = 25°C

CASE 369AC

3 IPAK

(Straight Lead)

CASE 369AA

DPAK

CASE 369D

IPAK

Continuous Drain

Current R

(Note 1)

= 25°C

= 85°C

= 25°C

34.5

26.8

25.9

(Bent Lead)

STYLE 2

(Straight Lead

DPAK)

Power Dissipation

(Note 1)

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Pulsed Drain

Current

t =10ms

T = 25°C

Drain

Current Limited by Package

T = 25°C

DmaxPkg

Drain

Operating Junction and Storage

Temperature

T ,

-55 to

+175

°C

STG

Source Current (Body Diode)

Drain to Source dV/dt

21.6

dV/dt

EAS

V/ns

Single Pulse Drain-to-Source Avalanche

Energy (T = 25°C, V = 50 V, V = 10 V,

I = 10 A , L = 0.3 mH, R = 25 W)

Drain

Gate Drain Source

Gate Source

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Gate Drain Source

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Year

= Work Week

3817N = Device Code

= Pb-Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

December, 2007 - Rev. 0

Publication Order Number:

NTD3817N/D

12 3 4 5 6 7 8

中文翻译

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与NTD3817N相关器件

型号	品牌	获取价格	描述	数据表
NTD3817N-1G	ONSEMI	获取价格	Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK
NTD3817N-35G	ONSEMI	获取价格	Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK
NTD3817NT4G	ONSEMI	获取价格	Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK
NTD40	EDI	获取价格	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD405	NEC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
NTD407	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3
NTD407	RENESAS	获取价格	5A, 100V, NPN, Si, POWER TRANSISTOR, TO-8
NTD408	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3
NTD409	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2
NTD40N03R	ONSEMI	获取价格	Power MOSFET 45 Amps, 25 Volts

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