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NTD4302_10

更新时间： 2024-11-18 12:01:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 118K
描述
Power MOSFET 68 A, 30 V, N−Channel DPAK

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NTD4302_10 数据手册

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NTD4302  
Power MOSFET  
68 A, 30 V, N−Channel DPAK  
Features  
• Ultra Low R  
DS(on)  
• Higher Efficiency Extending Battery Life  
• Logic Level Gate Drive  
http://onsemi.com  
• Diode Exhibits High Speed, Soft Recovery  
• Avalanche Energy Specified  
V
R
DS(on)  
TYP  
I MAX  
D
(BR)DSS  
30 V  
7.8 mW @ 10 V  
68 A  
• I  
Specified at Elevated Temperature  
• DPAK Mounting Information Provided  
DSS  
• These Devices are Pb−Free and are RoHS Compliant  
N−Channel  
D
Applications  
• DC−DC Converters  
• Low Voltage Motor Control  
• Power Management in Portable and Battery Powered Products:  
i.e., Computers, Printers, Cellular and Cordless Telephones,  
and PCMCIA Cards  
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Drain−to−Source Voltage  
Symbol Value  
Unit  
Vdc  
Vdc  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
V
30  
20  
DSS  
Gate−to−Source Voltage − Continuous  
Thermal Resistance − Junction−to−Case  
V
GS  
4
R
1.65  
75  
°C/W  
W
A
A
q
JC  
Drain  
P
D
Total Power Dissipation @ T = 25°C  
C
I
I
68  
Continuous Drain Current @ T = 25°C (Note 4)  
D
D
C
C
43  
4
Continuous Drain Current @ T = 100°C  
DPAK  
CASE 369C  
(Surface Mount)  
STYLE 2  
Thermal Resistance − Junction−to−Ambient  
R
67  
1.87  
11.3  
7.1  
°C/W  
W
q
P
D
D
JA  
D
(Note 2)  
2
1
I
A
Total Power Dissipation @ T = 25°C  
A
3
I
A
A
Continuous Drain Current @ T = 25°C  
A
2
I
36  
DM  
Continuous Drain Current @ T = 100°C  
1
A
3
Drain  
Pulsed Drain Current (Note 3)  
Gate  
Source  
Thermal Resistance − Junction−to−Ambient  
R
120  
1.04  
8.4  
°C/W  
W
q
P
D
D
JA  
D
(Note 1)  
4
I
A
Total Power Dissipation @ T = 25°C  
A
I
5.3  
A
A
Drain  
Continuous Drain Current @ T = 25°C  
A
4
I
28  
DM  
Continuous Drain Current @ T = 100°C  
A
Pulsed Drain Current (Note 3)  
DPAK  
CASE 369D  
(Straight Lead)  
STYLE 2  
Operating and Storage Temperature Range  
T , T  
−55 to  
°C  
J
stg  
150  
1
Single Pulse Drain−to−Source Avalanche  
E
AS  
722  
mJ  
2
Energy − Starting T = 25°C  
J
3
(V = 30 Vdc, V = 10 Vdc,  
DD  
GS  
Peak I = 17 Apk, L = 5.0 mH, R = 25 W)  
L
G
1
2
3
Maximum Lead Temperature for Soldering  
Purposes, 1/8 in from case for 10 seconds  
T
260  
°C  
Gate Drain Source  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
Y
= Year  
= Work Week  
= Device Code  
= Pb−Free Package  
WW  
T4302  
G
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.  
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.  
4. Current Limited by Internal Lead Wires.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
package dimensions section on page 5 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 − Rev. 8  
NTD4302/D  
 
1234567

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