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NTD4805N

更新时间： 2024-02-21 06:29:32
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 81K
描述
Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK

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NTD4805N 数据手册

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NTD4805N  
Power MOSFET  
30 V, 88 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
DS(on)  
MAX  
I MAX  
D
(BR)DSS  
Applications  
5.0 mW @ 10 V  
7.4 mW @ 4.5 V  
• CPU Power Delivery  
• DC−DC Converters  
• Low Side Switching  
30 V  
88 A  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
N−Channel  
V
DSS  
G
V
"20  
16  
V
GS  
Continuous Drain  
I
A
T = 25°C  
D
A
S
4
Current (R ) (Note 1)  
q
JA  
T = 85°C  
A
12.6  
2.24  
4
Power Dissipation  
(R ) (Note 1)  
T = 25°C  
A
P
W
A
D
q
JA  
4
Continuous Drain  
I
T = 25°C  
A
12.6  
9.8  
D
Current (R ) (Note 2)  
q
JA  
T = 85°C  
A
2
1
Steady  
State  
1
2
3
1
2
3
CASE 369D  
DPAK  
(Straight Lead)  
STYLE 2  
3
Power Dissipation  
(R ) (Note 2)  
T = 25°C  
A
P
I
1.35  
W
A
D
q
JA  
CASE 369AC  
3 IPAK  
(Straight Lead)  
CASE 369C  
DPAK  
(Bend Lead)  
STYLE 2  
Continuous Drain  
T
T
T
= 25°C  
= 85°C  
= 25°C  
88  
68  
66  
D
C
C
C
Current (R  
(Note 1)  
)
q
JC  
Power Dissipation  
(R ) (Note 1)  
P
W
D
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Pulsed Drain Current  
t =10ms T = 25°C  
p
I
DM  
175  
45  
A
A
A
4
Current Limited by Package  
T = 25°C  
A
I
DmaxPkg  
Drain  
4
4
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Drain  
Drain  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
55  
6.0  
288  
A
S
dV/dt  
V/ns  
mJ  
Single Pulse Drain−to−Source Avalanche  
Energy (V = 30 V, V = 10 V,  
E
AS  
2
DD  
GS  
1
2
3
L = 1.0 mH, I  
= 24 A, R = 25 W)  
Drain  
L(pk)  
G
1
3
Gate Drain Source  
Gate Source  
1
2
3
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Gate Drain Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Y
WW  
= Year  
= Work Week  
4805N = Device Code  
= Pb−Free Package  
G
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 0  
NTD4805N/D  
12345678

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