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NTD4806N1G

更新时间： 2024-01-23 14:25:16
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
8页 157K
描述
11A, 30V, 0.0094ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3

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NTD4806N1G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：compliant风险等级：5.82
雪崩能效等级（Eas）：220 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.0094 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSIP-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：150 A
认证状态：Not Qualified表面贴装：NO
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTD4806N1G 数据手册

 浏览型号NTD4806N1G的Datasheet PDF文件第2页浏览型号NTD4806N1G的Datasheet PDF文件第3页浏览型号NTD4806N1G的Datasheet PDF文件第4页浏览型号NTD4806N1G的Datasheet PDF文件第5页浏览型号NTD4806N1G的Datasheet PDF文件第6页浏览型号NTD4806N1G的Datasheet PDF文件第7页 
NTD4806N, NVD4806N  
Power MOSFET  
30 V, 76 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
• Optimized Gate Charge to Minimize Switching Losses  
• AEC−Q101 Qualified and PPAP Capable − NVD4806N  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
6.0 mW @ 10 V  
9.4 mW @ 4.5 V  
30 V  
76 A  
Applications  
• CPU Power Delivery  
• DC−DC Converters  
• Low Side Switching  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
N−Channel  
G
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
S
V
GS  
"20  
15.6  
12  
V
Continuous Drain  
I
D
A
T = 25°C  
A
Current (R ) (Note 1)  
4
q
JA  
T = 85°C  
A
4
Power Dissipation  
(R ) (Note 1)  
T = 25°C  
P
2.65  
W
A
A
D
q
JA  
2
1
1
Continuous Drain  
I
D
T = 25°C  
A
11.3  
8.8  
3
2
3
Current (R ) (Note 2)  
q
JA  
T = 85°C  
A
Steady  
State  
CASE 369AD  
IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
(Bent Lead)  
STYLE 2  
Power Dissipation  
(R ) (Note 2)  
T = 25°C  
A
P
I
1.4  
W
A
D
q
JA  
Continuous Drain  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
79  
61  
68  
D
Current (R  
(Note 1)  
)
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Power Dissipation  
(R ) (Note 1)  
P
D
W
q
JC  
4
4
Pulsed Drain Current  
t =10ms T = 25°C  
I
150  
45  
A
A
p
A
DM  
I
DmaxPkg  
Drain  
Drain  
Current Limited by Package  
T = 25°C  
A
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
50  
6.0  
220  
A
S
2
dV/dt  
V/ns  
mJ  
1
2
3
Drain  
1
3
Gate Drain Source  
Single Pulse Drain−to−Source Avalanche  
E
AS  
Gate Source  
Energy (V = 24 V, V = 10 V,  
DD  
GS  
L = 1.0 mH, I  
= 21 A, R = 25 W)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Y
WW  
= Year  
= Work Week  
4806N = Device Code  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 − Rev. 9  
NTD4806N/D  
12345678

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