是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | DPAK-3 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.26 | Is Samacsys: | N |
雪崩能效等级(Eas): | 288 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 95 A | 最大漏极电流 (ID): | 12.6 A |
最大漏源导通电阻: | 0.0074 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 79 W | 最大脉冲漏极电流 (IDM): | 175 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTD4805N-35G | ONSEMI |
类似代替 ![]() |
Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK |
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NTD4805NT4G | ONSEMI |
功能相似 ![]() |
Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTD4805N-35G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK |
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NTD4805NT4G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK |
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NTD4805NT4G | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 |
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NTD4806N | ONSEMI |
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Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK |
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NTD4806N1G | ONSEMI |
获取价格 |
11A, 30V, 0.0094ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3 |
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NTD4806N-1G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK |
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NTD4806N35G | ONSEMI |
获取价格 |
11A, 30V, 0.0094ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369AC-01, 3 IPAK-3 |
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NTD4806N-35G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK |
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NTD4806NT4G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK |
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NTD4808N | ONSEMI |
获取价格 |
Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK |
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