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NTD4302T4 PDF预览

NTD4302T4

更新时间: 2024-11-17 22:19:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 89K
描述
Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)

NTD4302T4 技术参数

是否无铅: 不含铅生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.1其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):722 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):8.4 A最大漏极电流 (ID):8.4 A
最大漏源导通电阻:0.01 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.04 W最大脉冲漏极电流 (IDM):28 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn80Pb20)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTD4302T4 数据手册

 浏览型号NTD4302T4的Datasheet PDF文件第2页浏览型号NTD4302T4的Datasheet PDF文件第3页浏览型号NTD4302T4的Datasheet PDF文件第4页浏览型号NTD4302T4的Datasheet PDF文件第5页浏览型号NTD4302T4的Datasheet PDF文件第6页浏览型号NTD4302T4的Datasheet PDF文件第7页 
NTD4302  
Power MOSFET  
68 Amps, 30 Volts  
N−Channel DPAK  
Features  
Ultra Low R  
DS(on)  
http://onsemi.com  
Higher Efficiency Extending Battery Life  
Logic Level Gate Drive  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
Diode Exhibits High Speed, Soft Recovery  
Avalanche Energy Specified  
30 V  
7.8 mW @ 10 V  
68 A  
I  
Specified at Elevated Temperature  
DSS  
N−Channel  
DPAK Mounting Information Provided  
D
Applications  
DC−DC Converters  
Low Voltage Motor Control  
G
Power Management in Portable and Battery Powered Products:  
i.e., Computers, Printers, Cellular and Cordless Telephones, and  
PCMCIA Cards  
S
4
4
2
1
1
2
3
3
CASE 369AA  
DPAK  
CASE 369D  
DPAK  
(Surface Mount)  
(Straight Lead)  
STYLE 2  
STYLE 2  
MARKING DIAGRAM  
& PIN ASSIGNMENTS  
4 Drain  
4 Drain  
1
Gate  
3
3
2
Source  
1
Gate  
Source  
Drain  
2
T4302 = Device Code  
Drain  
Y
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
Device  
NTD4302  
Package  
Shipping  
DPAK  
75 Units/Rail  
75 Units/Rail  
DPAK  
Straight Lead  
NTD4302−1  
NTD4302T4  
2500 Tape & Reel  
DPAK  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
October, 2003 − Rev. 5  
NTD4302/D  

NTD4302T4 替代型号

型号 品牌 替代类型 描述 数据表
NTD4302T4G ONSEMI

类似代替

Power MOSFET 68 A, 30 V, N−Channel DPAK
NTD4302G ONSEMI

类似代替

Power MOSFET 68 A, 30 V, N−Channel DPAK
NTD4302 ONSEMI

类似代替

Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)

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TRANSISTOR 32 A, 24 V, 0.00517 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3, FE
NTD4404N1 ROCHESTER

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32A, 24V, 0.00517ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
NTD4404N1 ONSEMI

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TRANSISTOR 32 A, 24 V, 0.00517 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3, FE
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NTD4404NT4 ONSEMI

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32A, 24V, 0.00517ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
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Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK
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