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NTD4804N-1G

更新时间： 2024-11-18 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 276K
描述
Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

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NTD4804N-1G 数据手册

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NTD4804N  
Power MOSFET  
30 V, 117 A, Single N--Channel, DPAK/IPAK  
Features  
• Low RDS(on) to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb--Free Devices  
http://onsemi.com  
V
R
DS(on)  
MAX  
I MAX  
D
(BR)DSS  
Applications  
4.0 mΩ @ 10 V  
5.5 mΩ @ 4.5 V  
• CPU Power Delivery  
• DC--DC Converters  
• Low Side Switching  
30 V  
117 A  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain--to--Source Voltage  
Gate--to--Source Voltage  
Continuous Drain  
Symbol  
Value  
30  
Unit  
V
N--Channel  
V
DSS  
G
V
20  
19  
V
GS  
I
A
T
= 25°C  
= 85°C  
= 25°C  
D
A
S
Current (R ) (Note 1)  
θ
JA  
T
A
15  
4
Power Dissipation  
(R ) (Note 1)  
T
A
P
2.5  
W
A
D
θ
JA  
4
Continuous Drain  
Current (R ) (Note 2)  
I
T
A
= 25°C  
= 85°C  
= 25°C  
14.5  
11  
D
θ
JA  
T
A
Steady  
State  
2
1
1
2
3
CASE 369D  
IPAK  
(Straight Lead  
DPAK)  
3
Power Dissipation  
(R ) (Note 2)  
T
A
P
I
1.43  
W
A
D
θ
JA  
CASE 369AD  
3 IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
(Bent Lead)  
STYLE 2  
Continuous Drain  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
117  
91  
D
Current (R  
(Note 1)  
)
θ
JC  
Power Dissipation  
P
93.75  
W
D
(R ) (Note 1)  
θ
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Pulsed Drain Current  
t =10ms  
p
T
A
= 25°C  
= 25°C  
I
230  
45  
A
A
DM  
I
DmaxPkg  
4
4
Drain  
Current Limited by Package  
T
A
4
Drain  
Drain  
Operating Junction and Storage Temperature  
T , T  
-- 5 5 t o  
175  
°C  
J
stg  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
78  
6.0  
450  
A
S
dV/dt  
V/ns  
mJ  
Single Pulse Drain--to--Source Avalanche  
E
AS  
2
Energy (V = 24 V, V = 10 V,  
DD  
GS  
Drain  
1
3
1
2
3
L = 1.0 mH, I  
= 30 A, R = 25 Ω)  
L(pk)  
G
Gate Source  
Gate Drain Source  
1
2
3
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Gate Drain Source  
Y
WW  
= Year  
= Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
4804N = Device Code  
= Pb--Free Package  
G
ORDERING INFORMATION  
Seedetailedorderingandshippinginformationinthepackage  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
June, 2010 -- Rev. 6  
NTD4804N/D  
12345678

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NTD4804N-1G 替代型号

型号 品牌 替代类型 描述 数据表
NTD4854N-1G ONSEMI

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