Datasheet > NTD4804NT4G

NTD4804NT4G

更新时间： 2024-05-23 22:23:18

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	370K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:117A;Vgs(th)(V):±20;漏源导通电阻:4mΩ@10V;漏源导通电阻:5.5mΩ@4.5V

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NTD4804NT4G 数据手册

UMW

NTD4804N

30V N-Channel MOSFET

Description

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free and are RoHS Compliant

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

Features

V_DS(V) = 30V

I_D= 117A (V_GS= 10V)

R_DS(ON)< 4mΩ (V_GS= 10V)

R_DS(ON)< 5.5mΩ (V_GS= 4.5V)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

"20

19.6

15.2

2.66

T = 25°C

Continuous Drain Current (R ) (Note 1

)

T = 85°C

T = 25°C

(R ) (Note 1)

Power Dissipation

Continuous Drain

Power Dissipation

T = 25°C

14.5

Current (R ) (Note 2

)

T = 85°C

Steady

State

T = 25°C

1.43

(R ) (Note 2)

= 25°C

= 85°C

= 25°C

124

Current (R

)

(Note 1)

Continuous Drain

107

(R ) (Note 1)

Power Dissipation

Pulsed Drain Current

t =10ms

T = 25°C

230

Current Limited by Package

T = 25°C

DmaxPkg

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Source Current (Body Diode)

Drain to Source dV/dt

6.0

450

dV/dt

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (V = 24 V, V = 10 V,

L = 1.0 mH, I

= 30 A, R = 25 W)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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