Datasheet > NTD4805NT4G

NTD4805NT4G

更新时间： 2024-05-23 22:23:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	465K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:88A;Vgs(th)(V):±20;漏源导通电阻:5mΩ@10V;漏源导通电阻:7.4mΩ@4.5V

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NTD4805NT4G 数据手册

NTD4805N

UMW

30V N-Channel MOSFET

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

Applications

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

•

V_DS(V) = 30V

I_D= 88A (V_GS= 10V)

N−Channel

R_DS(ON)< 5.0mΩ (V _GS= 10V)

R_DS(ON)< 7.4mΩ (V _GS= 4.5V)

•

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

Continuous Drain

T = 25°C

17.4

13.5

2.65

Current (R ) (Note 1)

T = 85°C

Power Dissipation

(R ) (Note 1)

T = 25°C

Continuous Drain

T = 25°C

12.7

9.8

Current (R ) (Note 2)

T = 85°C

Steady

State

Power Dissipation

(R ) (Note 2)

T = 25°C

1.41

Continuous Drain

= 25°C

= 85°C

= 25°C

Current (R

(Note 1)

)

Power Dissipation

(R ) (Note 1)

Pulsed Drain Current

t =10ms T = 25°C

175

Current Limited by Package

T = 25°C

DmaxPkg

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Source Current (Body Diode)

Source Current (Body Diode) Pulsed t =20 ms

175

6.0

288

Drain to Source dV/dt

dV/dt

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (V = 24 V, V = 10 V,

L = 1.0 mH, I

= 24 A, R = 25 W)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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