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NTD4302-001G PDF预览

NTD4302-001G

更新时间： 2024-10-02 19:52:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
7页 111K
描述
8.4A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3

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NTD4302-001G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：CASE 369D-01, DPAK-3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.67其他特性：LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：722 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：8.4 A最大漏源导通电阻：0.01 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSIP-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：28 A
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTD4302-001G 数据手册

 浏览型号NTD4302-001G的Datasheet PDF文件第2页浏览型号NTD4302-001G的Datasheet PDF文件第3页浏览型号NTD4302-001G的Datasheet PDF文件第4页浏览型号NTD4302-001G的Datasheet PDF文件第5页浏览型号NTD4302-001G的Datasheet PDF文件第6页浏览型号NTD4302-001G的Datasheet PDF文件第7页 
NTD4302  
Power MOSFET  
68 A, 30 V, N−Channel DPAK  
Features  
• Ultra Low R  
DS(on)  
• Higher Efficiency Extending Battery Life  
• Logic Level Gate Drive  
http://onsemi.com  
• Diode Exhibits High Speed, Soft Recovery  
• Avalanche Energy Specified  
V
R
DS(on)  
TYP  
I MAX  
D
(BR)DSS  
30 V  
7.8 mW @ 10 V  
68 A  
• I  
Specified at Elevated Temperature  
• DPAK Mounting Information Provided  
DSS  
• These Devices are Pb−Free and are RoHS Compliant  
N−Channel  
D
Applications  
• DC−DC Converters  
• Low Voltage Motor Control  
• Power Management in Portable and Battery Powered Products:  
i.e., Computers, Printers, Cellular and Cordless Telephones,  
and PCMCIA Cards  
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Drain−to−Source Voltage  
Symbol Value  
Unit  
Vdc  
Vdc  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
V
30  
20  
DSS  
Gate−to−Source Voltage − Continuous  
Thermal Resistance − Junction−to−Case  
V
GS  
4
R
1.65  
75  
°C/W  
W
A
A
q
JC  
Drain  
P
D
Total Power Dissipation @ T = 25°C  
C
I
I
68  
Continuous Drain Current @ T = 25°C (Note 4)  
D
D
C
C
43  
4
Continuous Drain Current @ T = 100°C  
DPAK  
CASE 369C  
(Surface Mount)  
STYLE 2  
Thermal Resistance − Junction−to−Ambient  
R
67  
1.87  
11.3  
7.1  
°C/W  
W
q
P
D
D
JA  
D
(Note 2)  
2
1
I
A
Total Power Dissipation @ T = 25°C  
A
3
I
A
A
Continuous Drain Current @ T = 25°C  
A
2
I
36  
DM  
Continuous Drain Current @ T = 100°C  
1
A
3
Drain  
Pulsed Drain Current (Note 3)  
Gate  
Source  
Thermal Resistance − Junction−to−Ambient  
R
120  
1.04  
8.4  
°C/W  
W
q
P
D
D
JA  
D
(Note 1)  
4
I
A
Total Power Dissipation @ T = 25°C  
A
I
5.3  
A
A
Drain  
Continuous Drain Current @ T = 25°C  
A
4
I
28  
DM  
Continuous Drain Current @ T = 100°C  
A
Pulsed Drain Current (Note 3)  
DPAK  
CASE 369D  
(Straight Lead)  
STYLE 2  
Operating and Storage Temperature Range  
T , T  
−55 to  
°C  
J
stg  
150  
1
Single Pulse Drain−to−Source Avalanche  
E
AS  
722  
mJ  
2
Energy − Starting T = 25°C  
J
3
(V = 30 Vdc, V = 10 Vdc,  
DD  
GS  
Peak I = 17 Apk, L = 5.0 mH, R = 25 W)  
L
G
1
2
3
Maximum Lead Temperature for Soldering  
Purposes, 1/8 in from case for 10 seconds  
T
260  
°C  
Gate Drain Source  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
Y
= Year  
= Work Week  
= Device Code  
= Pb−Free Package  
WW  
T4302  
G
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.  
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.  
4. Current Limited by Internal Lead Wires.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
package dimensions section on page 5 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 − Rev. 8  
NTD4302/D  
 
1234567

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