生命周期: | Contact Manufacturer | 包装说明: | O-PALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.76 |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 60 V | JESD-30 代码: | O-PALF-W2 |
最大非重复峰值正向电流: | 20 A | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 最大输出电流: | 0.3 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 40000 V | 子类别: | Rectifier Diodes |
表面贴装: | NO | 技术: | AVALANCHE |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTD405 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | |
NTD407 | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 | |
NTD407 | RENESAS |
获取价格 |
5A, 100V, NPN, Si, POWER TRANSISTOR, TO-8 | |
NTD408 | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 | |
NTD409 | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 | |
NTD40N03R | ONSEMI |
获取价格 |
Power MOSFET 45 Amps, 25 Volts | |
NTD40N03R-1 | ONSEMI |
获取价格 |
Power MOSFET 45 Amps, 25 Volts | |
NTD40N03R-1G | ONSEMI |
获取价格 |
Power MOSFET 45 Amps, 25 Volts | |
NTD40N03RG | ONSEMI |
获取价格 |
Power MOSFET 45 Amps, 25 Volts | |
NTD40N03RT4 | ONSEMI |
获取价格 |
Power MOSFET 45 Amps, 25 Volts |