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NTD40 PDF预览

NTD40

更新时间: 2024-11-18 03:45:51
品牌 Logo 应用领域
EDI 高压
页数 文件大小 规格书
2页 35K
描述
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

NTD40 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.76
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):60 VJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:20 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:40000 V子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

NTD40 数据手册

 浏览型号NTD40的Datasheet PDF文件第2页 
NTD  
HIGH VOLTAGE-HIGH CURRENT  
SILICON RECTIFIERS  
DIFFUSED SILICON JUNCTIONS  
PRV 8,000 TO 60,000 VOLTS  
AVALANCHE CHARACTERISTICS  
LOW LEAKAGE  
Max. Fwd. Voltage  
Peak  
Avg. Fwd.Current  
Length L  
Fig.3  
o
o
EDI Type No.  
Reverse V oltage  
C
Drop at 25 C And I O  
at 50  
PRV (V olts)  
(mA)  
V (Volts)  
F
NTD 08  
NTD 10  
NTD 12  
NTD 15  
NTD 20  
NTD 25  
NTD 30  
NTD 35  
NTD 40  
NTD 45  
NTD 50  
NTD 60  
8,000  
10,000  
12,000  
15,000  
20,000  
25,000  
30,000  
35,000  
40,000  
45,000  
50,000  
60,000  
300  
300  
300  
300  
300  
300  
300  
300  
300  
300  
300  
300  
12  
15  
18  
24  
30  
38  
45  
54  
60  
70  
76  
83  
1.00  
1.25  
1.50  
2.00  
2.50  
3.00  
3.75  
4.00  
5.00  
6.25  
6.25  
8.00  
=25 C Unless Otherwise Specified)  
ELECTRICAL CHARACTERISTICS(at TA  
o
C, I  
Max. DC Reverse Current @ PRVand 25  
1
A
R
o
100  
C, I  
A
Max. DC Reverse Current @ PRVand 100  
R
o
o
to +125  
C
-55  
C
Ambient Operating Temperature Range,T  
A
o
o
to +150  
C
-55  
C
Storage Temperature Range, T  
STG  
Amps  
20  
Max.One-Half Cycle Surge Current, I  
(Surge )@ 60Hz  
FM  

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