是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | LEAD FREE, CASE 369D-01, IPAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.32 | Is Samacsys: | N |
雪崩能效等级(Eas): | 15 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 16 V |
最大漏极电流 (ID): | 7.6 A | 最大漏源导通电阻: | 0.029 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | NOT SPECIFIED |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 78 A | 认证状态: | COMMERCIAL |
表面贴装: | NO | 端子面层: | TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTD4969N-1G | ONSEMI |
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NTD4969N-35G | ONSEMI |
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NTD4813N-35G | ONSEMI |
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NTD3817NT4G | ONSEMI |
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NTD40 | EDI |
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NTD405 | NEC |
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NTD407 | NEC |
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NTD407 | RENESAS |
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NTD408 | NEC |
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NTD409 | NEC |
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NTD40N03R | ONSEMI |
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NTD40N03R-1 | ONSEMI |
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NTD40N03R-1G | ONSEMI |
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