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NTD3808N-1G

更新时间： 2024-09-30 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关脉冲
页数 文件大小 规格书
7页 94K
描述
Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK

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中文翻译

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NTD3808N-1G 数据手册

 浏览型号NTD3808N-1G的Datasheet PDF文件第2页浏览型号NTD3808N-1G的Datasheet PDF文件第3页浏览型号NTD3808N-1G的Datasheet PDF文件第4页浏览型号NTD3808N-1G的Datasheet PDF文件第5页浏览型号NTD3808N-1G的Datasheet PDF文件第6页浏览型号NTD3808N-1G的Datasheet PDF文件第7页 
NTD3808N  
Power MOSFET  
16 V, 76 A, Single N-Channel, DPAK/IPAK  
Features  
•ꢀTrench Technology  
•ꢀLow R  
to Minimize Conduction Losses  
http://onsemi.com  
DS(on)  
•ꢀLow Capacitance to Minimize Driver Losses  
•ꢀOptimized Gate Charge to Minimize Switching Losses  
•ꢀThese are Pb-Free Devices  
V
R
MAX  
I
D
MAX  
(BR)DSS  
DS(ON)  
5.8 mW @ 10 V  
8.5 mW @ 4.5 V  
16 V  
76 A  
Applications  
•ꢀDC-DC Converters  
•ꢀLow Side Switching  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
16  
Unit  
G
V
DSS  
V
V
A
Gate-to-Source Voltage  
Continuous Drain  
V
GS  
16  
S
I
D
T = 25°C  
17  
A
N-CHANNEL MOSFET  
Current R  
(Note 1)  
q
JA  
T = 85°C  
A
13  
4
4
Power Dissipation  
(Note 1)  
T = 25°C  
P
2.6  
W
A
A
D
D
D
4
R
q
JA  
Continuous Drain  
Current R  
(Note 2)  
I
D
T = 25°C  
A
12  
9.1  
1.3  
q
JA  
2
1
1
T = 85°C  
A
Steady  
State  
1
2
3
3
2
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
W
A
3
R
CASE 369AC  
3 IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
CASE 369D  
IPAK  
q
JA  
Continuous Drain  
Current R  
(Note 1)  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
76  
59  
52  
D
(Bent Lead)  
STYLE 2  
(Straight Lead  
DPAK)  
q
JC  
Power Dissipation  
(Note 1)  
P
W
R
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Pulsed Drain Current  
t =10ms  
p
T = 25°C  
A
I
DM  
152  
35  
A
A
Current Limited by Package  
T = 25°C  
A
I
DmaxPkg  
4
Drain  
Operating Junction and Storage  
Temperature  
T ,  
J
-55 to  
+175  
°C  
4
Drain  
4
Drain  
T
STG  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
51  
6
A
S
dV/dt  
EAS  
V/ns  
mJ  
Single Pulse Drain-to-Source Avalanche  
Energy (T = 25°C, V = 50 V, V = 10 V,  
29.4  
J
DD  
I = 14 A , L = 0.3 mH, R = 25 W)  
GS  
L
pk  
G
2
Drain  
1
2
3
Gate Drain Source  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
260  
°C  
1
3
Gate Source  
1
2
3
Gate Drain Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Y
WW  
= Year  
= Work Week  
3808N = Device Code  
= Pb-Free Package  
G
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
December, 2007 - Rev. 0  
1
Publication Order Number:  
NTD3808N/D  
1234567

中文翻译

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NTD3808N-1G 替代型号

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