NTD3813N-1G

更新时间： 2024-09-30 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	95K
描述
Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK

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NTD3813N-1G 数据手册

NTD3813N

Power MOSFET

16 V, 51 A, Single N-Channel, DPAK/IPAK

Features

•ꢀLow R

to Minimize Conduction Losses

DS(on)

•ꢀLow Capacitance to Minimize Driver Losses

•ꢀOptimized Gate Charge to Minimize Switching Losses

•ꢀThree Package Variations for Design Flexibility

•ꢀThese are Pb-Free Devices

http://onsemi.com

MAX

(BR)DSS

DS(ON)

8.75 mW @ 10 V

14.5 mW @ 4.5 V

16 V

51 A

Applications

•ꢀDC-DC Converters

•ꢀHigh Side Switching

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain

DSS

T = 25°C

13.8

N-CHANNEL MOSFET

Current R

(Note 1)

T = 85°C

10.7

2.6

Power Dissipation

(Note 1)

T = 25°C

Continuous Drain

Current R

(Note 2)

T = 25°C

9.6

7.4

1.2

T = 85°C

Steady

State

Power Dissipation

(Note 2)

T = 25°C

CASE 369AC

3 IPAK

(Straight Lead)

CASE 369AA

DPAK

CASE 369D

IPAK

Continuous Drain

Current R

(Note 1)

= 25°C

= 85°C

= 25°C

(Bent Lead)

STYLE 2

(Straight Lead

DPAK)

Power Dissipation

(Note 1)

34.9

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Pulsed Drain

Current

t =10ms

T = 25°C

114

Drain

Current Limited by Package

T = 25°C

DmaxPkg

Drain

Operating Junction and Storage

Temperature

T ,

-55 to

+175

°C

STG

Source Current (Body Diode)

Drain to Source dV/dt

dV/dt

EAS

V/ns

Single Pulse Drain-to-Source Avalanche

Energy (T = 25°C, V = 50 V, V = 10 V,

I = 10 A , L = 0.3 mH, R = 25 W)

Drain

Gate Drain Source

Gate Source

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Gate Drain Source

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Year

= Work Week

3813N = Device Code

= Pb-Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

December, 2007 - Rev. 0

Publication Order Number:

NTD3813N/D

12 3 4 5 6 7 8

中文翻译

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与NTD3813N-1G相关器件

型号	品牌	获取价格	描述	数据表
NTD3813N-35G	ONSEMI	获取价格	Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK
NTD3813NT4G	ONSEMI	获取价格	Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK
NTD3817N	ONSEMI	获取价格	Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK
NTD3817N-1G	ONSEMI	获取价格	Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK
NTD3817N-35G	ONSEMI	获取价格	Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK
NTD3817NT4G	ONSEMI	获取价格	Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK
NTD40	EDI	获取价格	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD405	NEC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
NTD407	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3
NTD407	RENESAS	获取价格	5A, 100V, NPN, Si, POWER TRANSISTOR, TO-8

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