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NTD3813N

更新时间： 2024-11-18 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 95K
描述
Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK

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中文翻译

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NTD3813N 数据手册

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NTD3813N  
Power MOSFET  
16 V, 51 A, Single N-Channel, DPAK/IPAK  
Features  
•ꢀLow R  
to Minimize Conduction Losses  
DS(on)  
•ꢀLow Capacitance to Minimize Driver Losses  
•ꢀOptimized Gate Charge to Minimize Switching Losses  
•ꢀThree Package Variations for Design Flexibility  
•ꢀThese are Pb-Free Devices  
http://onsemi.com  
V
R
MAX  
I
D
MAX  
(BR)DSS  
DS(ON)  
8.75 mW @ 10 V  
14.5 mW @ 4.5 V  
16 V  
51 A  
Applications  
•ꢀDC-DC Converters  
•ꢀHigh Side Switching  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Symbol  
Value  
16  
Unit  
G
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain  
V
DSS  
V
V
A
V
GS  
16  
S
I
D
T = 25°C  
13.8  
A
N-CHANNEL MOSFET  
Current R  
(Note 1)  
q
JA  
T = 85°C  
A
10.7  
2.6  
4
4
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
W
A
D
D
D
4
R
q
JA  
Continuous Drain  
Current R  
(Note 2)  
I
D
T = 25°C  
A
9.6  
7.4  
1.2  
q
JA  
2
1
1
T = 85°C  
A
Steady  
State  
1
2
3
3
2
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
W
A
3
R
CASE 369AC  
3 IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
CASE 369D  
IPAK  
q
JA  
Continuous Drain  
Current R  
(Note 1)  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
51  
39  
D
(Bent Lead)  
STYLE 2  
(Straight Lead  
DPAK)  
q
JC  
Power Dissipation  
(Note 1)  
P
34.9  
W
A
R
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
114  
35  
4
Drain  
Current Limited by Package  
T = 25°C  
A
I
A
DmaxPkg  
4
Drain  
4
Drain  
Operating Junction and Storage  
Temperature  
T ,  
J
-55 to  
+175  
°C  
T
STG  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
29  
6
A
S
dV/dt  
EAS  
V/ns  
mJ  
Single Pulse Drain-to-Source Avalanche  
Energy (T = 25°C, V = 50 V, V = 10 V,  
15  
J
DD  
I = 10 A , L = 0.3 mH, R = 25 W)  
GS  
2
Drain  
1
2
3
Gate Drain Source  
L
pk  
G
1
3
Gate Source  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
260  
°C  
1
2
3
Gate Drain Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Y
WW  
= Year  
= Work Week  
3813N = Device Code  
= Pb-Free Package  
G
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
December, 2007 - Rev. 0  
1
Publication Order Number:  
NTD3813N/D  
12345678

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