Datasheet > NTD360N80S3Z

NTD360N80S3Z

更新时间： 2024-11-19 11:16:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	365K
描述
MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, DPAK

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NTD360N80S3Z 数据手册

MOSFET – Power,

N-Channel, SUPERFET⁾III

800 V, 360 mW, 13 A

NTD360N80S3Z

Description

www.onsemi.com

800 V SUPERFET III MOSFET is ON Semiconductor’s high

performance MOSFET family offering 800 V breakdown voltage.

New 800 V SUPERFET III MOSFET which is optimized for

primary switch of flyback converter, enables lower switching losses

and case temperature without sacrificing EMI performance thanks to

its optimized design. In addition, internal Zener Diode significantly

improves ESD capability.

This new family of 800 V SUPERFET III MOSFET enables to

make more efficient, compact, cooler and more robust applications

because of its remarkable performance in switching power applications

such as Laptop adapter, Audio, Lighting, ATX power and industrial

power supplies.

MAX

I MAX

(BR)DSS

DS(ON)

800 V

360 mW

13 A

Features

• Typ. R

= 300 mW

DS(on)

• Ultra Low Gate Charge (Typ. Q = 25.3 nC)

POWER MOSFET

• Low Stored Energy in Output Capacitance (Eoss = 2.72 mJ @ 400 V)

• 100% Avalanche Tested

• ESD Improved Capability with Zener Diode

• RoHS Compliant

Applications

D−PAK

TO−252

CASE 369AS

• Adapters / Chargers

• LED Lighting

• AUX Power

• Audio

MARKING DIAGRAM

• Industrial Power

&Z&3&K

NTD360

N80S3Z

= Assembly Plant Code

= Data Code (Year & Week)

= Lot

NTD360N80S3Z

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

April, 2020 − Rev. 0

NTD360N80S3Z/D

12 3 4 5 6 7...9

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