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NTD32N06T4G PDF预览

NTD32N06T4G

更新时间： 2024-02-19 13:54:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 72K
描述
32 Amps, 60 Volts, N−Channel DPAK

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NTD32N06T4G 数据手册

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NTD32N06  
Power MOSFET  
32 Amps, 60 Volts, N−Channel DPAK  
Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls and bridge  
circuits.  
http://onsemi.com  
Features  
• Pb−Free Packages are Available  
• Smaller Package than MTB36N06V  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
60 V  
26 mW  
32 A  
• Lower R  
DS(on)  
• Lower V  
• Lower Total Gate Charge  
• Lower and Tighter V  
DS(on)  
N−Channel  
D
SD  
• Lower Diode Reverse Recovery Time  
• Lower Reverse Recovery Stored Charge  
Typical Applications  
G
• Power Supplies  
• Converters  
• Power Motor Controls  
• Bridge Circuits  
S
MARKING  
DIAGRAMS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Vdc  
4
Drain  
Drain−to−Source Voltage  
V
DSS  
DGR  
Drain−to−Gate Voltage (R = 10 MW)  
V
60  
GS  
4
DPAK  
CASE 369C  
STYLE 2  
Gate−to−Source Voltage, Continuous  
V
V
"20  
"30  
GS  
GS  
− Non−Repetitive (t v10 ms)  
p
2
1
Drain Current  
− Continuous @ T = 25°C  
3
I
D
32  
22  
90  
Adc  
Apk  
A
2
− Continuous @ T = 100°C  
I
D
A
1
Gate  
3
Drain  
− Single Pulse (t v10 ms)  
I
DM  
p
Source  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
93.75  
0.625  
2.88  
1.5  
W
W/°C  
W
A
4
Total Power Dissipation @ T = 25°C (Note 1)  
Drain  
A
Total Power Dissipation @ T = 25°C (Note 2)  
W
A
4
DPAK−3  
CASE 369D  
STYLE 2  
Operating and Storage Temperature Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Single Pulse Drain−to−Source Avalanche  
E
AS  
313  
mJ  
Energy − Starting T = 25°C (Note 3)  
J
1
(V = 50 Vdc, V = 10 Vdc, L = 1.0 mH,  
DD  
GS  
2
3
I
= 25 A, V = 60 Vdc, R = 25 W)  
DS G  
L(pk)  
Thermal Resistance − Junction−to−Case  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
R
R
R
1.6  
52  
100  
°C/W  
°C  
1
2
3
q
JC  
JA  
JA  
Gate Drain Source  
q
q
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
260  
32N06  
A
Y
= Device Code  
= Assembly Location  
= Year  
L
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
1. When surface mounted to an FR4 board using 1″ pad size,  
2
(Cu Area 1.127 in ).  
2. When surface mounted to an FR4 board using minimum recommended pad  
2
size, (Cu Area 0.412 in ).  
3. Repetitive rating; pulse width limited by maximum junction temperature.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 3  
NTD32N06/D  
 
12345678

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NTD32N06T4G 替代型号

型号 品牌 替代类型 描述 数据表
FDD5690 ONSEMI

类似代替

 N 沟道，PowerTrench® MOSFET，60V，30A，27mΩ
NTD5413NT4G ONSEMI

类似代替

 Power MOSFET 30 Amps, 60 Volts Single N−Channel DPAK
NTD32N06G ONSEMI

类似代替

 32 Amps, 60 Volts, N−Channel DPAK

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