NTD32N06L-1G

更新时间： 2024-09-30 12:02:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	103K
描述
Power MOSFET 32 Amps, 60 Volts

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中文翻译

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数据手册

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NTD32N06L-1G 数据手册

NTD32N06L

Power MOSFET

32 Amps, 60 Volts

Logic Level, N-Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

DSS

TYP

I MAX

DS(ON)

Features

•ꢀSmaller Package than MTB30N06VL

60 V

23.7 mW

32 A

•ꢀLower R

, V

, and Total Gate Charge

DS(on)

•ꢀLower and Tighter V

N-Channel

•ꢀLower Diode Reverse Recovery Time

•ꢀLower Reverse Recovery Stored Charge

•ꢀPb-Free Packages are Available

Typical Applications

•ꢀPower Supplies

•ꢀConverters

•ꢀPower Motor Controls

•ꢀBridge Circuits

MARKING DIAGRAMS

& PIN ASSIGNMENTS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Drain

Rating

Symbol Value

Unit

Drain-to-Source Voltage

Vdc

DSS

Drain-to-Gate Voltage (R = 10 MW)

DGR

DPAK

Gate-to-Source Voltage

- Continuous

"20

"30

CASE 369C

(Surface Mount)

STYLE 2

- Non-Repetitive (t v10 ms)

Drain Current - Continuous @ T = 25°C

Adc

Apk

- Continuous @ T = 100°C

Drain

Gate

- Single Pulse (t v10 ms)

Source

Total Power Dissipation @ T = 25°C

93.75

0.625

2.88

1.5

W/°C

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 1)

Total Power Dissipation @ T = 25°C (Note 2)

Drain

Operating and Storage Temperature Range

T , T

-ꢁ55 to

+175

°C

stg

DPAK

CASE 369D

(Straight Lead)

STYLE 2

Single Pulse Drain-to-Source Avalanche

Energy - Starting T = 25°C (Note 3)

313

(V = 50 Vdc, V = 5 Vdc, L = 1.0 mH,

= 25 A, V = 60 Vdc, R = 25 W)

DS G

L(pk)

Thermal Resistance

Junction-to-Case

°C/W

°C

1.6

100

- Junction-to-Ambient (Note 1)

- Junction-to-Ambient (Note 2)

Gate Drain Source

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

260

= Year

= Work Week

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

32N06L

= Device Code

= Pb-Free Package

1. When surface mounted to FR4 board using 0.5 in pad size.

2. When surface mounted to FR4 board using minimum recommended pad size.

3. Repetitive rating; pulse width limited by maximum junction temperature.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

June, 2007 - Rev. 5

Publication Order Number:

NTD32N06L/D

12 3 4 5 6 7

中文翻译

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与NTD32N06L-1G相关器件

型号	品牌	获取价格	描述	数据表
NTD32N06LG	ONSEMI	获取价格	Power MOSFET 32 Amps, 60 Volts
NTD32N06LT4	ONSEMI	获取价格	Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK)
NTD32N06LT4G	ONSEMI	获取价格	Power MOSFET 32 Amps, 60 Volts
NTD32N06T4	ONSEMI	获取价格	32 Amps, 60 Volts, N−Channel DPAK
NTD32N06T4G	ONSEMI	获取价格	32 Amps, 60 Volts, N−Channel DPAK
NTD35	EDI	获取价格	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD360N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTD360N80S3Z	ONSEMI	获取价格	MOSFET – Power, N-Channel, SUPERFET® III, 800
NTD3808N	ONSEMI	获取价格	Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK
NTD3808N-1G	ONSEMI	获取价格	Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK

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