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NTD3055L170G PDF预览

NTD3055L170G

更新时间: 2024-11-02 03:45:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 83K
描述
9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK

NTD3055L170G 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
雪崩能效等级(Eas):30 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):9 A最大漏极电流 (ID):9 A
最大漏源导通电阻:0.17 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.5 W最大脉冲漏极电流 (IDM):27 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTD3055L170G 数据手册

 浏览型号NTD3055L170G的Datasheet PDF文件第2页浏览型号NTD3055L170G的Datasheet PDF文件第3页浏览型号NTD3055L170G的Datasheet PDF文件第4页浏览型号NTD3055L170G的Datasheet PDF文件第5页浏览型号NTD3055L170G的Datasheet PDF文件第6页浏览型号NTD3055L170G的Datasheet PDF文件第7页 
NTD3055L170  
Power MOSFET  
9.0 Amps, 60 Volts, Logic Level,  
N−Channel DPAK  
Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls and bridge  
circuits.  
http://onsemi.com  
9.0 AMPERES, 60 VOLTS  
Features  
RDS(on) = 170 mW  
Pb−Free Packages are Available  
N−Channel  
Typical Applications  
D
Power Supplies  
Converters  
Power Motor Controls  
Bridge Circuits  
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
Rating  
Symbol  
Value  
Unit  
DIAGRAMS  
Drain−to−Source Voltage  
V
60  
60  
Vdc  
Vdc  
Vdc  
DSS  
4
Drain−to−Gate Voltage (R = 10 MW)  
V
DGR  
GS  
Drain  
Gate−to−Source Voltage  
− Continuous  
V
V
"15  
"20  
4
GS  
GS  
DPAK  
− Non−repetitive (t v10 ms)  
p
CASE 369AA  
(Surface Mounted)  
STYLE 2  
Drain Current  
− Continuous @ T = 25°C  
Adc  
Apk  
2
1
I
D
9.0  
3.0  
27  
A
3
− Continuous @ T = 100°C  
I
D
A
2
− Single Pulse (t v10 ms)  
I
DM  
p
1
Gate  
3
Drain  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
Total Power Dissipation @ T = 25°C (Note 1)  
P
28.5  
0.19  
2.1  
W
W/°C  
W
Source  
A
D
4
A
Drain  
Total Power Dissipation @ T = 25°C (Note 2)  
1.5  
W
A
Operating and Storage Temperature Range  
T , T  
55 to  
175  
°C  
4
J
stg  
DPAK−3  
CASE 369D  
(Straight Lead)  
STYLE 2  
Single Pulse Drain−to−Source Avalanche  
E
AS  
30  
mJ  
Energy − Starting T = 25°C  
J
(V = 25 Vdc, V = 5.0 Vdc,  
DD  
GS  
1
L = 1.0 mH, I (pk) = 7.75 A, V = 60 Vdc)  
L
DS  
2
3
Thermal Resistance  
− Junction−to−Case  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
°C/W  
1
2
3
R
R
R
5.2  
71.4  
100  
q
JC  
JA  
JA  
Gate Drain Source  
q
q
3170L  
A
Y
= Device Code  
= Assembly Location  
= Year  
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10 seconds  
T
L
260  
°C  
W
= Work Week  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
1. When surface mounted to an FR4 board using 0.5 sq in pad size.  
2. When surface mounted to an FR4 board using minimum recommended  
pad size.  
dimensions section on page 2 of this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 3  
NTD3055L170/D  
 

NTD3055L170G 替代型号

型号 品牌 替代类型 描述 数据表
NTD3055L170 ONSEMI

完全替代

9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4G ONSEMI

类似代替

9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4 ONSEMI

类似代替

9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK

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