Datasheet > NTD3055L170.1G

NTD3055L170.1G

更新时间： 2024-11-18 12:22:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	133K
描述
Power MOSFET

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中文翻译

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数据手册

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NTD3055L170.1G 数据手册

NTD3055L170,

NVD3055L170

Power MOSFET

9.0 A, 60 V, Logic Level, N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

9.0 AMPERES, 60 VOLTS

Features

• NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These are Pb−Free Devices

R_DS(on)= 170 mW

N−Channel

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

DPAK

CASE 369C

(Surface Mounted)

STYLE 2

Rating

Symbol

Value

Unit

Vdc

Drain−to−Source Voltage

DSS

DGR

Drain−to−Gate Voltage (R = 10 MW)

Gate−to−Source Voltage

− Continuous

"15

"20

DPAK−3

CASE 369D

(Straight Lead)

STYLE 2

− Non−repetitive (t v10 ms)

Drain Current

− Continuous @ T = 25°C

Adc

Apk

9.0

3.0

− Continuous @ T = 100°C

− Single Pulse (t v10 ms)

Total Power Dissipation @ T = 25°C

Derate above 25°C

28.5

0.19

2.1

W/°C

MARKING DIAGRAMS

Total Power Dissipation @ T = 25°C (Note 1)

Total Power Dissipation @ T = 25°C (Note 2)

1.5

1 − Gate

2 − Drain

YWW

70LG

Operating and Storage Temperature Range

T , T

−55 to

175

°C

stg

Drain

3 − Source

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

(V = 25 Vdc, V = 5.0 Vdc,

L = 1.0 mH, I (pk) = 7.75 A, V = 60 Vdc)

1 − Gate

2 − Drain

YWW

70LG

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

°C/W

5.2

71.4

100

Drain

3 − Source

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

= Assembly Location

= Year

= Work Week

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommen-

ded Operating Conditions is not implied. Extended exposure to stresses above

the Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using minimum recommended

pad size.

3170L = Device Code

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

June, 2012 − Rev. 5

NTD3055L170/D

12 3 4 5 6 7 8

中文翻译

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与NTD3055L170.1G相关器件

型号	品牌	获取价格	描述	数据表
NTD3055L170_12	ONSEMI	获取价格	Power MOSFET
NTD3055L170-1	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170-1G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD30N02	ONSEMI	获取价格	Power MOSFET 30 Amps, 24 Volts
NTD30N02	ROCHESTER	获取价格	30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
NTD30N02G	ROCHESTER	获取价格	30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3
NTD30N02G	ONSEMI	获取价格	N Channel DPAK MOSFET 30 Amps, 24 Volts

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