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NTD18N06LT4G PDF预览

NTD18N06LT4G

更新时间: 2024-11-17 22:09:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 83K
描述
Power MOSFET

NTD18N06LT4G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:1 week
风险等级:0.71Samacsys Description:N-channel MOSFET Transistor, 18 A, 60 V, 4-pin D-PAK
雪崩能效等级(Eas):72 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):18 A最大漏极电流 (ID):18 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):80 pFJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
功耗环境最大值:55 W最大功率耗散 (Abs):55 W
最大脉冲漏极电流 (IDM):54 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):120 ns最大开启时间(吨):180 ns

NTD18N06LT4G 数据手册

 浏览型号NTD18N06LT4G的Datasheet PDF文件第2页浏览型号NTD18N06LT4G的Datasheet PDF文件第3页浏览型号NTD18N06LT4G的Datasheet PDF文件第4页浏览型号NTD18N06LT4G的Datasheet PDF文件第5页浏览型号NTD18N06LT4G的Datasheet PDF文件第6页浏览型号NTD18N06LT4G的Datasheet PDF文件第7页 
NTD18N06L  
Power MOSFET  
18 Amps, 60 Volts, Logic Level  
N−Channel DPAK  
Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls and bridge  
circuits.  
http://onsemi.com  
V
R
TYP  
I
MAX  
(BR)DSS  
DS(on)  
D
Features  
18 A  
60 V  
54 mW@5.0 V  
Pb−Free Packages are Available  
(Note 1)  
Typical Applications  
N−Channel  
Power Supplies  
Converters  
D
Power Motor Controls  
Bridge Circuits  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
S
Rating  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
V
60  
60  
Vdc  
Vdc  
Vdc  
DSS  
MARKING  
DIAGRAMS  
Drain−to−Gate Voltage (R = 10 MW)  
V
DGR  
GS  
Gate−to−Source Voltage  
− Continuous  
4
V
V
"15  
"20  
GS  
GS  
Drain  
− Non−repetitive (t v10 ms)  
p
4
Drain Current  
− Continuous @ T = 25°C  
DPAK  
CASE 369C  
STYLE 2  
I
18  
10  
54  
Adc  
Apk  
A
D
− Continuous @ T = 100°C  
I
D
A
2
1
− Single Pulse (t v10 ms)  
I
DM  
p
3
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
55  
0.36  
2.1  
W
W/°C  
W
A
2
1
Gate  
3
Drain  
Total Power Dissipation @ T = 25°C (Note 2)  
A
Source  
Operating and Storage Temperature Range  
T , T  
55 to  
+175  
°C  
J
stg  
4
Drain  
Single Pulse Drain−to−Source Avalanche  
E
AS  
72  
mJ  
4
Energy − Starting T = 25°C  
J
DPAK−3  
CASE 369D  
STYLE 2  
(V = 50 Vdc, V = 5.0 Vdc,  
DD  
GS  
L = 1.0 mH, I (pk) = 12 A, V = 60 Vdc)  
L
DS  
Thermal Resistance  
− Junction−to−Case  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
°C/W  
1
R
R
R
2.73  
100  
71.4  
q
JC  
JA  
JA  
2
3
q
q
1
2
3
Maximum Lead Temperature for Soldering  
T
L
260  
°C  
Gate Drain Source  
Purposes, 1/8from case for 10 seconds  
18N6L  
A
Y
Device Code  
= Assembly Location  
= Year  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
WW  
= Work Week  
1. When surface mounted to an FR−4 board using the minimum recommended  
pad size.  
2. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 3  
NTD18N06L/D  
 

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