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NTD20N06LT4G

更新时间： 2024-01-31 10:12:04

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	128K
描述
Power MOSFET 20 Amps, 60 Volts Logic Level, NâChannel DPAK

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NTD20N06LT4G 数据手册

NTD20N06L, NTDV20N06L

Power MOSFET

20 Amps, 60 Volts

Logic Level, N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

DS(on)

TYP

I MAX

(BR)DSS

Features

20 A

(Note 1)

60 V

39 mW@5.0 V

• AEC Q101 Qualified − NTDV20N06L

• These Devices are Pb−Free and are RoHS Compliant

N−Channel

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Vdc

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Drain−to−Source Voltage

DSS

DGR

Drain−to−Gate Voltage (R = 10 MW)

Gate−to−Source Voltage

− Continuous

"15

"20

Drain

− Non−repetitive (t v10 ms)

DPAK

Drain Current

CASE 369C

(Surface Mount)

STYLE 2

− Continuous @ T = 25°C

Adc

Apk

− Continuous @ T = 100°C

− Single Pulse (t v10 ms)

Gate

Total Power Dissipation @ T = 25°C

W/°C

Drain

Derate above 25°C

Source

0.40

1.88

1.36

Total Power Dissipation @ T = 25°C (Note 1)

Total Power Dissipation @ T = 25°C (Note 2)

Operating and Storage Temperature Range

T , T

−55 to

+175

°C

Drain

stg

DPAK

CASE 369D

(Straight Lead)

STYLE 2

Single Pulse Drain−to−Source Avalanche

128

Energy − Starting T = 25°C

(V = 25 Vdc, V = 5.0 Vdc,

L = 1.0 mH, I (pk) = 16 A, V = 60 Vdc)

Thermal Resistance

°C/W

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

2.5

110

Gate Drain Source

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

260

°C

= Year

= Work Week

= Device Code

= Pb−Free Package

20N6L

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in ).

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

2. When surface mounted to an FR4 board using recommended pad size,

(Cu Area 0.412 in ).

Semiconductor Components Industries, LLC, 2011

Publication Order Number:

October, 2011 − Rev. 3

NTD20N06L/D

12 3 4 5 6 7 8

中文翻译

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NTD20N06LT4G 替代型号

型号	品牌	替代类型	描述	数据表
NTD5867NLT4G	ONSEMI	类似代替	N-Channel Power MOSFET 60 V, 20 A, 39 m
NTD20N06T4G	ONSEMI	类似代替	Power MOSFET
NTD20N06G	ONSEMI	类似代替	Power MOSFET

与NTD20N06LT4G相关器件

型号	品牌	获取价格	描述	数据表
NTD20N06T4	ONSEMI	获取价格	Power MOSFET
NTD20N06T4G	ONSEMI	获取价格	Power MOSFET
NTD20N08/D	ETC	获取价格	80 V Power MOSFET
NTD20P06L	ONSEMI	获取价格	Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK
NTD20P06L-1	ONSEMI	获取价格	Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK
NTD20P06L-1G	ONSEMI	获取价格	Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK
NTD20P06LG	ONSEMI	获取价格	Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK
NTD20P06LG	ROCHESTER	获取价格	15.5A, 60V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, CASE 369C-01,
NTD20P06LT4	ONSEMI	获取价格	Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK
NTD20P06LT4G	ONSEMI	获取价格	Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK

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