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NTD20N03L27T4G PDF预览

NTD20N03L27T4G

更新时间： 2024-11-17 22:28:47
品牌 Logo 应用领域
安森美 - ONSEMI /
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6页 63K
描述
Power MOSFET

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NTD20N03L27T4G 数据手册

 浏览型号NTD20N03L27T4G的Datasheet PDF文件第2页浏览型号NTD20N03L27T4G的Datasheet PDF文件第3页浏览型号NTD20N03L27T4G的Datasheet PDF文件第4页浏览型号NTD20N03L27T4G的Datasheet PDF文件第5页浏览型号NTD20N03L27T4G的Datasheet PDF文件第6页 
NTD20N03L27  
Power MOSFET  
20 Amps, 30 Volts, N−Channel DPAK  
This logic level vertical power MOSFET is a general purpose part  
that provides the “best of design” available today in a low cost power  
package. Avalanche energy issues make this part an ideal design in.  
The drain−to−source diode has a ideal fast but soft recovery.  
http://onsemi.com  
Features  
20 A, 30 V, RDS(on) = 27 mW  
• Pb−Free Packages are Available  
N−Channel  
• Ultra−Low R , Single Base, Advanced Technology  
DS(on)  
• SPICE Parameters Available  
D
• Diode is Characterized for use in Bridge Circuits  
• I  
and V  
Specified at Elevated Temperatures  
DSS  
DS(on)  
• High Avalanche Energy Specified  
• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0  
G
Typical Applications  
S
• Power Supplies  
• Inductive Loads  
• PWM Motor Controls  
MARKING  
DIAGRAMS  
• Replaces MTD20N03L in many Applications  
4
Drain  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
4
DPAK  
Rating  
Symbol  
Value  
Unit  
CASE 369C  
STYLE 2  
Drain−to−Source Voltage  
V
30  
30  
Vdc  
Vdc  
Vdc  
DSS  
2
1
Drain−to−Gate Voltage (R = 1.0 MW)  
V
DGR  
GS  
3
Gate−to−Source Voltage  
− Continuous  
2
1
Gate  
3
V
V
"20  
"24  
GS  
GS  
Drain  
− Non−Repetitive (t v10 ms)  
Source  
p
Drain Current  
4
− Continuous @ T = 25_C  
I
I
20  
16  
60  
Adc  
Apk  
A
D
D
Drain  
− Continuous @ T = 100_C  
A
− Single Pulse (t v10 ms)  
p
4
I
DM  
DPAK−3  
CASE 369D  
STYLE 2  
Total Power Dissipation @ T = 25_C  
P
74  
0.6  
1.75  
W
W/°C  
W
A
D
Derate above 25°C  
Total Power Dissipation @ T = 25°C (Note 1)  
C
Operating and Storage Temperature Range  
T , T  
−55 to  
150  
°C  
J
stg  
1
2
3
Single Pulse Drain−to−Source Avalanche  
E
AS  
288  
mJ  
1
2
3
Energy − Starting T = 25°C  
J
Gate Drain Source  
(V = 30 Vdc, V = 5 Vdc, L = 1.0 mH,  
DD  
GS  
I
= 24 A, V = 34 Vdc)  
L(pk)  
DS  
20N3L  
A
Y
= Device Code  
= Assembly Location  
= Year  
Thermal Resistance  
− Junction−to−Case  
°C/W  
R
R
R
1.67  
100  
71.4  
q
JC  
JA  
JA  
− Junction−to−Ambient  
− Junction−to−Ambient (Note 1)  
q
q
WW  
= Work Week  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
260  
°C  
L
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. When surface mounted to an FR4 board using the minimum recommended  
pad size and repetitive rating; pulse width limited by maximum junction  
temperature.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 2  
NTD20N03L27/D  
 
123456

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NTD20N03L27T4G 替代型号

型号 品牌 替代类型 描述 数据表
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