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NTD20P06L-1G PDF预览

NTD20P06L-1G

更新时间: 2024-09-23 02:51:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 116K
描述
Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK

NTD20P06L-1G 技术参数

是否无铅:不含铅生命周期:End Of Life
包装说明:LEAD FREE, CASE 369D-01, DPAK-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.28Is Samacsys:N
雪崩能效等级(Eas):304 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):15 A最大漏极电流 (ID):15.5 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):54 W最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTD20P06L-1G 数据手册

 浏览型号NTD20P06L-1G的Datasheet PDF文件第2页浏览型号NTD20P06L-1G的Datasheet PDF文件第3页浏览型号NTD20P06L-1G的Datasheet PDF文件第4页浏览型号NTD20P06L-1G的Datasheet PDF文件第5页浏览型号NTD20P06L-1G的Datasheet PDF文件第6页浏览型号NTD20P06L-1G的Datasheet PDF文件第7页 
NTD20P06L  
Power MOSFET  
60 V, 15.5 A, Single PChannel, DPAK  
Features  
Withstands High Energy in Avalanche and Commutation Modes  
Low Gate Charge for Fast Switching  
PbFree Packages are Available  
http://onsemi.com  
I
MAX  
D
(Note 1)  
V
R
DS(on)  
TYP  
Applications  
(BR)DSS  
Bridge Circuits  
60 V  
130 mW @ 5.0 V  
15.5 A  
Power Supplies, Power Motor Controls  
DCDC Conversion  
PChannel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol Value  
Unit  
V
V
60  
$20  
$30  
15.5  
DSS  
G
GatetoSource  
Voltage  
Continuous  
V
V
GS  
S
NonRepetitive  
t
v10 ms  
V
GSM  
p
Continuous  
Drain Current  
(Note 1)  
Steady State  
T = 25°C  
I
A
A
D
MARKING DIAGRAMS  
4
4
Drain  
Power Dissipa-  
tion (Note 1)  
Steady State  
T = 25°C  
P
65  
W
A
A
D
2
1
3
Pulsed Drain  
Current  
t = 10 ms  
p
I
$50  
DM  
DPAK  
CASE 369C  
Style 2  
Operating Junction and Storage Temperature  
T ,  
STG  
55 to  
°C  
mJ  
J
2
T
175  
1
Gate  
3
Drain  
Source  
4
Single Pulse DraintoSource Avalanche  
E
304  
AS  
Energy (V = 25 V, V = 5 V, I = 15 A,  
4
DD  
GS  
PK  
L = 2.7 mH, R = 25 W)  
G
Drain  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
1
2
3
DPAK  
CASE 369D  
Style 2  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
2.3  
80  
Unit  
JunctiontoCase (Drain)  
R
q
°C/W  
JC  
JunctiontoAmbient – Steady State (Note 1)  
JunctiontoAmbient – Steady State (Note 2)  
R
q
1
2
3
20P06L  
Y
Device Code  
= Year  
JA  
Gate Drain Source  
R
q
110  
JA  
WW  
= Work Week  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
1. Surfacemounted on FR4 board using  
1
in sq. pad size  
(Cu area = 1.127 in sq. [1 oz] including traces)  
2. Surfacemounted on FR4 board using the minimum recommended pad size  
(Cu area = 0.412 in sq.)  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 Rev. 4  
NTD20P06L/D  
 

NTD20P06L-1G 替代型号

型号 品牌 替代类型 描述 数据表
NTD20P06LT4G ONSEMI

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Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK
NTD20P06LT4 ONSEMI

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Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK
NTD20P06LG ONSEMI

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Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK

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