Datasheet > NTD20N06L-001

NTD20N06L-001

更新时间： 2024-11-18 20:02:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	93K
描述
20A, 60V, 0.048ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3

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技术参数
数据手册

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NTD20N06L-001 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	IN-LINE, R-PSIP-T3	针数：	3
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.26	Base Number Matches：	1

NTD20N06L-001 数据手册

NTD20N06L, NTDV20N06L

Power MOSFET

20 A, 60 V, Logic Level, N−Channel

DPAK/IPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

www.onsemi.com

TYP

I MAX

(BR)DSS

DS(on)

Features

20 A

(Note 1)

60 V

39 mW@5.0 V

• AEC Q101 Qualified − NTDV20N06L

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Vdc

Drain−to−Source Voltage

DSS

Drain−to−Gate Voltage (R = 10 MW)

DGR

Gate−to−Source Voltage

− Continuous

DPAK

IPAK

− Non−repetitive (t v10 ms)

CASE 369C

STYLE 2

CASE 369D

STYLE 2

Drain Current

− Continuous @ T = 25°C

Adc

Apk

− Continuous @ T = 100°C

MARKING DIAGRAMS

& PIN ASSIGNMENTS

− Single Pulse (t v10 ms)

Total Power Dissipation @ T = 25°C

W/°C

Derate above 25°C

0.40

1.88

1.36

Drain

Total Power Dissipation @ T = 25°C (Note 1)

Total Power Dissipation @ T = 25°C (Note 2)

Operating and Storage Temperature Range

T , T

−55 to

+175

°C

stg

Single Pulse Drain−to−Source Avalanche

128

Energy − Starting T = 25°C

Gate

Drain

(V = 25 Vdc, V = 5.0 Vdc,

Source

L = 1.0 mH, I (pk) = 16 A, V = 60 Vdc)

Gate Drain Source

Thermal Resistance

°C/W

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

2.5

110

20N6L

= Assembly Location*

= Year

= Work Week

= Device Code

= Pb−Free Package

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

260

°C

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in ).

2. When surface mounted to an FR4 board using recommended pad size,

(Cu Area 0.412 in ).

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

August, 2017 − Rev. 5

NTD20N06L/D

12 3 4 5 6 7 8

中文翻译

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与NTD20N06L-001相关器件

型号	品牌	获取价格	描述	数据表
NTD20N06L-1	ONSEMI	获取价格	Power MOSFET 20 Amps, 60 Volts, Logic Level
NTD20N06L-1G	ONSEMI	获取价格	Power MOSFET 20 Amps, 60 Volts Logic Level, N
NTD20N06LG	ONSEMI	获取价格	Power MOSFET 20 Amps, 60 Volts Logic Level, N
NTD20N06LT4	ONSEMI	获取价格	Power MOSFET 20 Amps, 60 Volts, Logic Level
NTD20N06LT4G	ONSEMI	获取价格	Power MOSFET 20 Amps, 60 Volts Logic Level, N
NTD20N06LT4G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
NTD20N06T4	ONSEMI	获取价格	Power MOSFET
NTD20N06T4G	ONSEMI	获取价格	Power MOSFET
NTD20N08/D	ETC	获取价格	80 V Power MOSFET
NTD20P06L	ONSEMI	获取价格	Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK

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